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JDV2S02E
Diode Silicon Epitaxial Planar Type, VCO for UHF band
JDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S02E VCO for UHF band Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Low Series Resistance: rs = 0.60 Ω (typ.)
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
Note: Signal level when capacitance is measured. Vsig � 100 mVrms
Marking Unit: mm
Weight: 0.0014 g
