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JDV2S01SToshibaN/a4500avaiDiode Silicon Epitaxial Planar Type VCO for UHF band


JDV2S01S ,Diode Silicon Epitaxial Planar Type VCO for UHF bandJDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S VCO for UHF band Unit: mm  H ..
JDV2S02E ,Diode Silicon Epitaxial Planar Type, VCO for UHF bandJDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02E VCO for UHF band Unit: mm  S ..
JDV2S02S ,Diode Silicon Epitaxial Planar Type VCO for UHF bandJDV2S02S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02S VCO for UHF band Unit: mm  Hi ..
JDV2S05E ,Diode Silicon Epitaxial Planar Type VCO for UHF bandJDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band Unit: mm  Sm ..
JDV2S05S ,Diode Silicon Epitaxial Planar Type VCO for UHF bandJDV2S05S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05S VCO for UHF band Unit: mm  Hi ..
JDV2S06S ,Diode Silicon Epitaxial Planar Type, VCO for UHF Band RadioJDV2S06S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S06S VCO for UHF Band Radio Unit: mm ..
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JDV2S01S
Diode Silicon Epitaxial Planar Type VCO for UHF band
JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01S

VCO for UHF band High capacitance ratio: C1V/C4V = 2.0 (typ.) Low series resistance: rs = 0.5 Ω (typ.) This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta �
�� � 25°C)
Electrical Characteristics (Ta �
�� � 25°C)
Note: Signal level when capacitance is measured. Vsig � 100 mVrms
Marking

Unit: mm
Weight: 0.0011 g
ic,good price


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