JDV2S01S ,Diode Silicon Epitaxial Planar Type VCO for UHF bandJDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S VCO for UHF band Unit: mm H ..
JDV2S02E ,Diode Silicon Epitaxial Planar Type, VCO for UHF bandJDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02E VCO for UHF band Unit: mm S ..
JDV2S02S ,Diode Silicon Epitaxial Planar Type VCO for UHF bandJDV2S02S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02S VCO for UHF band Unit: mm Hi ..
JDV2S05E ,Diode Silicon Epitaxial Planar Type VCO for UHF bandJDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band Unit: mm Sm ..
JDV2S05S ,Diode Silicon Epitaxial Planar Type VCO for UHF bandJDV2S05S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05S VCO for UHF band Unit: mm Hi ..
JDV2S06S ,Diode Silicon Epitaxial Planar Type, VCO for UHF Band RadioJDV2S06S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S06S VCO for UHF Band Radio Unit: mm ..
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JDV2S01S
Diode Silicon Epitaxial Planar Type VCO for UHF band
JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01S VCO for UHF band High capacitance ratio: C1V/C4V = 2.0 (typ.) Low series resistance: rs = 0.5 Ω (typ.) This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
Note: Signal level when capacitance is measured. Vsig � 100 mVrms
Marking Unit: mm
Weight: 0.0011 g