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JDP3C04TU
Radio-frequency switching diode
JDP3C04TU TOSHIBA Diode Silicon Epitaxial Pin Type
JDP3C04TU VHF~UHF Band RF Attenuator Applications Useful for small size package Low capacitance: CT = 0.3 pF (typ.) Low series resistance: rs = 3.0 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C) Note: Signal level when capacitance is measured: Vsig = 100 mVrms
Marking Pin Assignment Unit: mm
Weight: 6.6 mg (typ.)
