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JDP2S02ACTTOSHIBAN/a550000avaiRadio-frequency switching diode


JDP2S02ACT ,Radio-frequency switching diodeElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitRevers ..
JDP2S02AFS ,Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator ApplicationsApplications Unit: mm  Suitable for reducing set’s size as a result from enabling high-density ..
JDP2S02AFS ,Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator ApplicationsJDP2S02AFS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02AFS UHF~VHF Band RF Switch
JDP2S02S ,Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator ApplicationsApplications Unit: mm  Suitable for reducing set’s size as a result from enabling high-density ..
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JDP2S02ACT
Radio-frequency switching diode
JDP2S02ACT TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S02ACT

UHF~VHF Band RF Switch Applications Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages. Low series resistance: rs = 1.0 Ω (typ.) Low capacitance: CT = 0.3 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)

Note1: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking

Weight: 0.00077g (typ.)
Unit: mm
Cathode
Part Number
CST2
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