JDH3D01S ,High frequency Schottky barrier diodeElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forwa ..
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JDH3D01S
High frequency Schottky barrier diode
JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01S For wave detection • Small package
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Marking Caution This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
Unit: mm °C
Weight: 0.0024 g (typ.)
