JANTX2N6786 ,400V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
JANTX2N6788 ,100V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
JANTX2N6790 ,200V Single N-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90427CIRFF220REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6790HEXFET TRANSISTORS JANTXV2N679 ..
JANTX2N6792 ,400V Single N-Channel Hi-Rel MOSFET in a TO-205AF packagePD -90428CIRFF320REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6792HEXFET TRANSISTORS JANTXV2N6792 ..
JANTX2N6794 ,500V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
JANTX2N6796 ,100V Single N-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90430CIRFF130REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6796HEXFET TRANSISTORS JANTXV2N679 ..
K78X6-1000 , WIDE INPUT NON-ISOLATED & REGULATED SINGLE OUTPUT
K78X6-500 , SINGLE POSITIVE/NEGATIVE OUTPUT
K7A161830B-QC16 , 512Kx36 & 1Mx18 Synchronous SRAM
K7A203200B-QC14 , 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
K7A203600B-QC14 , 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
K7A801800B-QC14 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
JANTX2N6786
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
International
IEZR Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on) ID
IRFF310 400V 3.69 1.25A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
PD - 90425C
IRFF3 1 O
J ANTX2N6786
JANTXV2N6786
REF:MIL-PRF-19500/556
400V, N-CHANNEL
Features:
I: Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 1.25
1D @ VGS = 10V, TC = 100°C Continuous Drain Current 0.80 A
IDM Pulsed Drain Current C) 5.5
PD @ TC = 25°C Max. Power Dissipation 15 W
Linear Derating Factor 0.12 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 0.82 mJ
IAR Avalanche Current Cf) - A
EAR Repetitive Avalanche Energy co - mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 0.98(typica1) g
For footnotes refer to the last page
1
01/22/01
IRFF310 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 400 - - V VGS = 0V, 1D = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.37 - VPC Reference to 25°C, 1D = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 3.6 Q VGS = 10V, ID = 0.80A 69
Resistance - - 4.15 VGS =10V, ID =1.25A co
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250yA
gfs Forward Transconductance 0.7 - - S (U) VDS > 15V, IDS = 0.80A CO
IDSS Zero Gate Voltage Drain Current - - 25 VDS= 320V, VGs=0V
- - 250 HA VDS = 320V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
Qg Total Gate Charge 6.7 - 8.4 VGS =10V, ID =1.25A
oy Gate-to-Source Charge 0.2 - 1.5 nC VDS= 200V
Qgd Gate-to-Drain (Niller') Charge 3.5 - 5.0
td(0n) Turn-On Delay Time - - 15 VDD = 200V, 1D = 1.25A,
tr Rise Time - - 20 RG = 7.59
Wom Turn-Off Delay Time - - 35 ns
tf Fall Time - - 30
LS + LD Total Inductance - 7.0 - nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 170 VGS = 0V, VDS = 25V
Cogs Output Capacitance - 49 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 10 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - l.25 A
ISM Pulse Source Current (Body Diode) (I) - - 5.5
VSD Diode Forward Voltage - - 1.4 V Tj = 25°C, Is =l.25A, VGS = 0V C4
trr Reverse Recovery Time - - 540 nS Tj = 25°C, IF =l.25A, di/dt S 100A/ps
QRR Reverse Recovery Charge - - 4.5 “C VDD S 50V ©
ton F orward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 8.3 'C/W
RthJA Junction-to-Ambient - - 175 Typical socket mount.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
