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JANSG2N7270
500V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
Internet onol
TOR, Rectifier
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
PD - 90673B
IRHM7450
JANSR2N727O
500V, N-CHANNEL
REF: MlL-PRF-19500I603
RAD-Hardm H EXFET' TECH NOLOGY
Product Summary
Part Number Radiation Level RDS(on) Ito QPL Part Number . .Ufs'-
IRHM7450 100K Rads (Si) 0.459 11A JANSR2N7270 v'.'"-; ii;
IRHM3450 300K Rads (Si) 0.459 11A JANSF2N7270 "s,';
IRHM4450 500K Rads (Si) 0.459 11A JANSG2N7270
IRHM8450 1000K Rads (Si) 0.459 11A JANSH2N7270 T0-254AA
International Rectifier's RAD-HardTM HEXFETO
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have Features:
been characterized for both Total Dose and Single " Single Event Effect (SEE) Hardened
Event Effects (SEE). The combination of low Rdson II Low RDS(on)
and low gate charge reduces the power losses in II Low Total Gate Charge
switching applications such as DC to DC converters a Simple Drive Requirements
and motor control. These devices retain all of the well I Ease of Paralleling
established advantages of MOSFETs such as voltage I: Hermetically Sealed
control, fast switching, ease of paralleling and n Ceramic Eyelets
temperature stability of electrical parameters. II Light Weight
Absolute Maximum Ratings Pre-Irradiation
Parameter Units
t @ VGS = 12V, TC = 25°C Continuous Drain Current 11
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 7.0 A
IDM Pulsed Drain Current (D 44
PD @ TC = 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 500 ml
IAR Avalanche Current C) 11 A
EAR Repetitive Avalanche Energy G) 15 mJ
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oc
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 9.3 (Typical) g
For footnotes refer to the last page
1
05/18/06
http://www.loa.com/
|RHM7450, JANSR2N7270 Pre-lrradiation
Electrical Characteristics @ T) = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage 500 - - V VGS =0 V, ID = 1.0mA
ABVDss/ATJ Temperature Coemcient of Breakdown - 0.6 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source - - 0.45 VGS = 12V, ID = 7.0A ©
On-State Resistance - - 0.50 Q VGS = 12V, ID = 11A
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGS, ID = 1.0mA
gfs Forward Transconductance 4.0 - - S (ES) VDS > 15V, IDS = 7.0A (0
loss Zero Gate Voltage Drain Current - - 50 A VDs= 400VNGS=0V
- - 250 " 1/DS = 400V
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 VGS = 20V
less Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
09 Total Gate Charge - - 150 VGS = 12V, ID = 11A
Qgs Gate-to-Source Charge - - 30 nC VDS = 250V
Qgd Gate-to-Drain ('Miller') Charge - - 75
td(on) Turn-On Delay Time - - 45 VDD = 250V, ID = 11A,
tr Rise Time - - 190 ns VGS = 12V, RG = 2.359
td(off) Turn-Off Delay Time - - 190
tf Fall Time - - 130
LS + LD Total Inductance - 8.7 - nH Measured from drainlead (6mm/0.25in.from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 4000 - VGS = 0V, VDs = 25V
Cogs Output Capacitance - 330 - pF t= 1.0MHz
Crss Reverse Transfer Capacitance - 52 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 11 A
ISM Pulse Source Current (Body Diode) CD - - 44
VSD Diode Forward Voltage - - 1.6 V Tj = 25°C, ls = 11A, VGS = 0V co
trr Reverse Recovery Time - - 1100 ns Tj = 25°C, IF = 11A, di/dt s: 100A/gs
QRR Reverse Recovery Charge - - 16 pC VDD S 50V (4)
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 0.83 °CNV
RthCS Case-to-sink - 0.21 -
RthJA Junction-to-Ambient - - 48 Typical socket mount
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
