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J175SIN/a11300avaiP-Channel JFET Switch
J176NationalN/a1000avaiP-Channel JFET Switch
MMBFJ175NSCN/a196avaiP-Channel Switch
MMBFJ176NATIONALN/a3000avaiP-Channel Switch


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J175-J176-MMBFJ175-MMBFJ176
P-Channel JFET Switch
Discrete POWER & Signal
Technologies
J174
J175
J176
J177
MMBFJ175
MMBFJ176
MMBFJ177
P-Channel Switch

This device is designed for low level analog switching sample and hold
circuits and chopper stabalized amplifiers. Sourced from Process 88.
SOT-23
Mark: 6W / 6X / 6YSD
TO-92
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
J174 - J177 *MMBFJ175
Total Device Dissipation
Derate above 25°C
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W
Symbol Parameter Value Units

VDG Drain-Gate Voltage - 30 V
VGS Gate-Source Voltage 30 V
IGF Forward Gate Current 50 mA
TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
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