J107 ,N-Channel Switchapplications wherevery low On Resistance is mandatory. Sourced from Process 59.Absolute Maximum Rat ..
J108 ,N-Channel SwitchS-04028—Rev. E, 04-Jun-017-1J/SST108 SeriesVishay Siliconix Gate-Drain, Gate-So ..
J109 ,N-Channel JFET SwitchJ108 / J109 / J110Discrete POWER & SignalTechnologiesNJ108J109J110G TO-92SDN-Channel SwitchThis dev ..
J110 ,N-Channel Switchapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
J111RLRP ,JFET Chopper TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
J112 ,N-Channel JFET SwitchS-04028—Rev. E, 04-Jun-017-1J/SST111 SeriesVishay Siliconix ..
K6F1008V2C-YF55 , 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
K6F1016U4C-EF70 , 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1016U4C-EF70 , 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616R6C-FF70 , 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616U6A-EF55 , 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616U6A-EF55 , 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
J107
N-Channel Switch
J105 / J106 / J107 / JFTJ105 J105 JFTJ105 J106 J107 G D G S SOT-223 TO-92 G S NOTE: Source & Drain D are interchangeable N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Drain-Gate Voltage 25 V DG V Gate-Source Voltage - 25 V GS I Forward Gate Current 10 mA GF 5 T , T Operating and Storage Junction Temperature Range -55 to +150 °C stg J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units J105 - 107 JFTJ105 P Total Device Dissipation 625 1,000 mW D 5.0 8.0 Derate above 25°C mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC Thermal Resistance, Junction to Ambient 357 125 R °C/W θJA 1997
