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Partno	Mfg	Dc	Qty	Available	Descript
ITA6V1U1	ST	N/a	460	avai	TRANSIL ARRAY FOR DATALINE PROTECTION

ITA6V1U1 ,TRANSIL ARRAY FOR DATALINE PROTECTIONFEATURESn HIGH SURGE CAPABILITY TRANSIL ARRAYI = 40 A (8/20μs)PPSO-8n PEAK PULSE POWER : 300 W (8/2 ..
ITA6V1U1RL ,TRANSIL" ARRAY FOR DATALINE PROTECTIONFEATURES■ High surge capability Transil array:I = 40 A (8/20µs)PPSO-8■ Peak pulse power : 300 W (8/ ..
ITA6V5B1 ,BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTIONFEATURESn HIGH SURGE CAPABILITY TRANSIL ARRAYI = 40 A (8/20μs)PPn PEAK PULSE POWER : 300 W (8/20μs) ..
ITA6V5B1RL ,BIDIRECTIONAL TRANSIL" ARRAY FOR DATALINE PROTECTIONFEATURES■ High surge capability Transil array:I = 40 A (8/20µs)PPTable 1: Order Codes■ Peak pulse p ..
ITA6V5C1 ,MONOLITHIC TRANSIL ARRAY FOR DATA LINE PROTECTIONFEATURESHIGH SURGE CAPABILITY TRANSIL ARRAYI = 40 A 8/20μsPPUP TO 5 BIDIRECTIONAL TRANSIL FUNC-TION ..
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ITA6V1U1
TRANSIL ARRAY FOR DATALINE PROTECTION
ITA6V1U1
TRANSIL TM ARRAY
FOR DATALINE PROTECTION
Data transmission lines protection: Unipolar signalupto 5.5V Bipolar signalin the+/- 2.5V range
APPLICATIONS
Application Specific Discretes
A.S.D.TM
FUNCTIONAL DIAGRAM HIGH SURGE CAPABILITY TRANSIL ARRAY
IPP=40A (8/20μs) PEAK PULSE POWER: 300W (8/20μs) UP TO6 UNIDIRECTIONAL TRANSIL FUNC-
TIONS LOW CLAMPING FACTOR (VCL /VBR)AT
HIGH CURRENT LEVEL LOW LEAKAGE CURRENT ESD PROTECTION UP TO 15kV
FEATURES
Transil diode arrays provide high overvoltage
protectionby clamping action. Their instantaneous
responseto transient overvoltages makes them
particularly suited to protect voltage sensitive
devices suchas MOS Technology and low voltage
supplied IC’s.
The ITA series allies high surge capability against
energetic pulses with high voltage performance
against ESD.
DESCRIPTION
IEC 1000-4-2: level4
IEC 1000-4-4: level4
IEC 1000-4-5: level2
MIL STD 883C- Method 3015-6: class3
(human body model)
COMPLIES WITH THE FOLLOWING STANDARDS:
ITA6V1U1
ELECTRICAL CHARACTERISTICS (Tamb= 25°C)
ABSOLUTE MAXIMUM RATINGS (Tamb= 25°C)
Note1: For surges greater than the specified maximum
value, theI/O will first presenta short-circuit and afteran
open circuit causedby the wire melting. 100s
%Ipps
Note2: BetweenI/Opin andground.
Note3: BetweenI/Opin andground,at0V Bias.F= 1MHz.
ITA6V1U1
1E-3 1E-2 1E-1 1E+0 1E+1
Ppp(W)
Fig.1: Typical peak pulse power versus
exponential pulse duration.
I(A)
1E-02 1E-01 1E+00 1E+01
1E+00
1E+01
1E+02
1E+03 DC
Fig.3: Peak current IDC inducing open circuitof
the wire for one input/output versus pulse duration
(typical values).
Fig.4: Junction capacitance versus reverse
applied voltage for one input/output (typical
values).
Fig. 2: Clamping voltage versus peak pulse
current (exponential waveform 8/20 μs).
Fig.5: Relative variationof leakage current
versus junction temperature
ITA6V1U1
ORDER CODE
APPLICATION INFORMATION
Typical application1: μP I/O lines
Typical application2: +/-2.5V Data lines
ITA6V1U1
MARKING
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implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedesand replacesall information previously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
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PACKAGE MECHANICAL DATA
SO-8 (Plastic)
Packaging: Preferredpackagingis tape and reel.
Weight: 0.08g.
:
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