ITA18B3RL ,BIDIRECTIONAL TRANSIL" ARRAY FOR DATALINE PROTECTIONITAxxB3®BIDIRECTIONAL TRANSIL™ ARRAYFOR DATALINE PROTECTIONASD™MAIN
ITA18B3RL ,BIDIRECTIONAL TRANSIL" ARRAY FOR DATALINE PROTECTIONFEATURES■ High surge capability Transil array:I = 40 A (8/20µs)PP■ Peak pulse power : 300 W (8/20µs ..
ITA25B1RL ,BIDIRECTIONAL TRANSIL" ARRAY FOR DATALINE PROTECTIONFEATURES■ High surge capability Transil array:I = 40 A (8/20µs)PPTable 1: Order Codes■ Peak pulse p ..
ITA25B3 ,BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTIONFEATURESn HIGH SURGE CAPABILITY TRANSIL ARRAYI = 40 A (8/20μs)PPn PEAK PULSE POWER : 300 W (8/20μs) ..
ITA25B3RL ,BIDIRECTIONAL TRANSIL" ARRAY FOR DATALINE PROTECTIONFEATURES■ High surge capability Transil array:I = 40 A (8/20µs)PP■ Peak pulse power : 300 W (8/20µs ..
ITA6V1U1 ,TRANSIL ARRAY FOR DATALINE PROTECTIONFEATURESn HIGH SURGE CAPABILITY TRANSIL ARRAYI = 40 A (8/20μs)PPSO-8n PEAK PULSE POWER : 300 W (8/2 ..
K4M51163LC-BG75 , 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M51163LE , 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M56163PG-BG90 , 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M56323LE-EE1H , 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M64163PK-BG1L , 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M64163PK-BG75 , 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
ITA18B3RL-ITA25B3RL
BIDIRECTIONAL TRANSIL" ARRAY FOR DATALINE PROTECTION
1/7
ITAxxB3BIDIRECTIONAL TRANSIL™ ARRAY
FOR DATALINE PROTECTION
REV. 1
December 2004
MAIN APPLICATIONSDifferential data transmission lines protection,
such as : RS-232 RS-423 RS-422 RS-485
FEATURES High surge capability Transil array:
IPP = 40 A (8/20µs) Peak pulse power : 300 W (8/20µs) Separated Input - Output Up to 9 bidirectional Transil functions Low clamping factor (VCL / VBR) at high current
level Low leakage current ESD protection up to 15kV
DESCRIPTIONTransil diode arrays provide high overvoltage
protection by clamping action. Their instantaneous
response to transient overvoltages makes them
particularly suited to protect voltage sensitive
devices such as MOS Technology and low voltage
supplied IC’s.
The ITA series combines high surge capability
against energetic pulses with high voltage per-
formance against ESD.
The separated input/output configuration of the
device ensures improved protection against very
fast transient overvoltage like ESD by elimination
of the spikes induced by parasitic inductances
created by external wiring.
COMPLIES WITH THE FOLLOWING STANDARDS: IEC61000-4-2 level 4:
15kV (air discharge)
8kV (contact discharge) MIL STD 883E-Method 3015-7: class3
25kV HBM (Human Body Model)
Table 1: Order CodesASD™
Figure 1: Functional Diagram
TM: ASD and TRANSIL are trademarks of STMicroelectronics.
ITAxxB3
Table 2: Absolute Ratings (Tamb = 25°C)
Table 3: Electrical Characteristics (T amb = 25°C)
Note 1: For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit caused by the wire melting.
Note 2: Between I/O pin and ground.
Note 3: Between two input pins at 0V Bias, F = 1 MHz.
ITAxxB33/7
Figure 2: Pulse waveform Figure 3: Typical peak pulse power versus
exponential pulse duration
Figure 4: Clamping voltage versus peak pulse
current (exponential waveform 8/20µs)
Figure 5: Peak current IDC inducing open
circuit of the wire for one input/output versus
pulse duration (typical values)
Figure 6: Junction capacitance versus reverse
applied voltage for one input/output (typical
values)
Figure 7: Relative variation of leakage current
versus junction temperature
ITAxxB3This monolithic Transil Array is based on 610 unidirectional Transils with a common cathode and can be
configurated to offer up to 9 bidirectional functions. This imposes a maximum differential voltage between
2 input pins (see table 4).
Table 4: Application information
Figure 8: RS-232 junction (typical application)
APPLICATION NOTICE
Design advantage of ITAxxxB3 used with 4-
point structure.
Figure 9: The4-point structureThe ITAxxxB3 has been designed with a 4-point
structure (separated Input/output) in order to
efficiently protect against disturbances with very
high di/dt rates, such as ESD.
The purpose of this 4-point structure is to eliminate
the overvoltage introduced by the parasitic
inductances of the wiring (Ldi/dt).
Efficient protection depends not only on the
component itself, but also on the circuit layout.The
drawing given in figure shows the layout to be
used in order to take advantage of the 4-point
structure of the ITAxxxB3.
ITAxxB35/7
Figure 10: Ordering Information Scheme
Figure 11: SO-20 Package Mechanical Data
Figure 12: Foot Print Dimensions (in millimeters)
ITAxxB3
Table 5: Ordering Information
Table 6: Revision History
