ISL9V3040D3S ,EcoSPARK TM 300mJ, 400V, N-Channel Ignition IGBTFeaturesThis device is intended for use in automotive ignition circuits,specifically as a coil driv ..
ISL9V3040D3ST ,17A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBTISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3October 2004ISL9V3040D3S / ISL9V3040S3S / IS ..
ISL9V3040D3ST ,17A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBTISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3October 2004ISL9V3040D3S / ISL9V3040S3S / IS ..
ISL9V3040D3ST ,17A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBTFeaturesvoltage clamping without the need for external components. Space saving D-Pak package avai ..
ISL9V3040P3 ,EcoSPARK TM 300mJ, 400V, N-Channel Ignition IGBTFeaturesThis device is intended for use in automotive ignition circuits,specifically as a coil driv ..
ISL9V3040S3ST ,17A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBTFeaturesvoltage clamping without the need for external components. Space saving D-Pak package avai ..
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
ISL9V3040D3S
EcoSPARK TM 300mJ, 400V, N-Channel Ignition IGBT
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 April 2002 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 TM EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT General Description Applications The ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are theAutomotive Ignition Coil Driver Circuits next generation ignition IGBTs that offer outstanding SCIS Coil- On Plug Applications capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-220 plastic packages. Features This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping Space saving D-Pak package availability without the need for external components. o SCIS Energy = 300mJ at T = 25 C J EcoSPARK™ devices can be custom made to specific clamp Logic Level Gate Drive voltages. Contact your nearest Fairchild sales office for more information. Formerly Developmental Type 49362 Package Symbol COLLECTOR JEDEC TO-252AA JEDEC TO-263AB JEDEC TO-220AB E D-Pak D²-Pak C G R 1 GATE G G R 2 E E EMITTER COLLECTOR COLLECTOR (FLANGE) (FLANGE) Device Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage (I = 1 mA) 430 V CER C BV Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA) 24 V ECS C E At Starting T = 25°C, I = 14.2A, L = 3.0 mHy 300 mJ SCIS25 J SCIS E At Starting T = 150°C, I = 10.6A, L = 3.0 mHy 170 mJ SCIS150 J SCIS I Collector Current Continuous, At T = 25°C, See Fig 9 21 A C25 C I Collector Current Continuous, At T = 110°C, See Fig 9 17 A C110 C V Gate to Emitter Voltage Continuous ±10 V GEM P Power Dissipation Total T = 25°C 150 W D C Power Dissipation Derating T > 25°C 1.0 W/°C C T Operating Junction Temperature Range -40 to 175 °C J T Storage Junction Temperature Range -40 to 175 °C STG T Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C L T Max Lead Temp for Soldering (Package Body for 10s) 260 °C pkg ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4kV ©2002 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 Rev. C2, April 2002
