ISL9R860S3ST ,8A, 600V Stealth Single Diodeapplications. The o• Operating Temperature . . . . . . . . . . . . . . . 175 CStealth™ family exhib ..
ISL9R860S3ST ,8A, 600V Stealth Single Diodeapplications. The low I and short t phase RRM a• Switch Mode Power Suppliesreduce loss in switching ..
ISL9V3040D3S ,EcoSPARK TM 300mJ, 400V, N-Channel Ignition IGBTFeaturesThis device is intended for use in automotive ignition circuits,specifically as a coil driv ..
ISL9V3040D3ST ,17A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBTISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3October 2004ISL9V3040D3S / ISL9V3040S3S / IS ..
ISL9V3040D3ST ,17A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBTISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3October 2004ISL9V3040D3S / ISL9V3040S3S / IS ..
ISL9V3040D3ST ,17A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBTFeaturesvoltage clamping without the need for external components. Space saving D-Pak package avai ..
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
ISL9R860S3ST
8A, 600V Stealth Single Diode
ISL9R860P2, ISL9R860S2, ISL9R860S3ST May 2004 ISL9R860P2, ISL9R860S2, ISL9R860S3ST 8A, 600V Stealth™ Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . t / t > 2.5 b a The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in • Fast Recovery . . . . . . . . . . . . . . . . . . . . t < 25ns rr high frequency hard switched applications. The o • Operating Temperature . . . . . . . . . . . . . . . 175 C Stealth™ family exhibits low reverse recovery current (I ) and exceptionally soft recovery under typical RRM • Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V operating conditions. • Avalanche Energy Rated This device is intended for use as a free wheeling or boost diode in power supplies and other power Applications switching applications. The low I and short t phase RRM a • Switch Mode Power Supplies reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions • Hard Switched PFC Boost Diode under which the diode may be operated without the use • UPS Free Wheeling Diode of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the •Motor Drive FWD most efficient and highest power density design at lower cost. • SMPS FWD Formerly developmental type TA49409. • Snubber Diode Package Symbol JEDEC TO-263AB JEDEC TO-220AC JEDEC STYLE TO-262 K ANODE ANODE CATHODE CATHODE CATHODE CATHODE (FLANGE) (FLANGE) A CATHODE N/C (FLANGE) ANODE Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R o I Average Rectified Forward Current (T = 147 C) 8 A F(AV) C I Repetitive Peak Surge Current (20kHz Square Wave) 16 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A FSM P Power Dissipation 85 W D E Avalanche Energy (1A, 40mH) 20 mJ AVL T , T Operating and Storage Temperature Range -55 to 175 °C J STG T Maximum Temperature for Soldering L T Leads at 0.063in (1.6mm) from Case for 10s 300 °C PKG Package Body for 10s, See Techbrief TB334 260 °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2004 ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1
