ISL9R860PF2 ,8A, 600V Stealth DiodeFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2b aThe ISL9R860PF2 i ..
ISL9R860S3S ,8A, 600V Stealth Diodeapplications. The low I and short t phase RRM a Switch Mode Power Suppliesreduce loss in switching ..
ISL9R860S3ST ,8A, 600V Stealth Single Diodeapplications. The o• Operating Temperature . . . . . . . . . . . . . . . 175 CStealth™ family exhib ..
ISL9R860S3ST ,8A, 600V Stealth Single Diodeapplications. The low I and short t phase RRM a• Switch Mode Power Suppliesreduce loss in switching ..
ISL9V3040D3S ,EcoSPARK TM 300mJ, 400V, N-Channel Ignition IGBTFeaturesThis device is intended for use in automotive ignition circuits,specifically as a coil driv ..
ISL9V3040D3ST ,17A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBTISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3October 2004ISL9V3040D3S / ISL9V3040S3S / IS ..
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
ISL9R860PF2
8A, 600V Stealth Diode
ISL9R860PF2 April 2003 ISL9R860PF2 8A, 600V Stealth™ Diode General Description Features Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2 b a The ISL9R860PF2 is a Stealth™ diode optimized for Fast Recovery. . . . . . . . . . . . . . . . . . . . . . . t < 25ns low loss performance in high frequency hard switched rr o applications. The Stealth™ family exhibits low reverse Operating Temperature. . . . . . . . . . . . . . . . . . 150 C recovery current (I ) and exceptionally soft recovery RRM Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V under typical operating conditions. Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV This device is intended for use as a free wheeling or Avalanche Energy Rated boost diode in power supplies and other power switching applications. The low I and short t phase RRM a Applications reduce loss in switching transistors. The soft recovery Switch Mode Power Supplies minimizes ringing, expanding the range of conditions Hard Switched PFC Boost Diode under which the diode may be operated without the use of additional snubber circuitry. Consider using the UPS Free Wheeling Diode Stealth™ diode with an SMPS IGBT to provide the Motor Drive FWD most efficient and highest power density design at lower cost.SMPS FWD Formerly developmental type TA49409.Snubber Diode Package Symbol TO-220F K A CATHODE ANODE Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R o I Average Rectified Forward Current (T = 75 C) 8 A F(AV) C I Repetitive Peak Surge Current (20kHz Square Wave) 16 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A FSM P Power Dissipation 26 W D E Avalanche Energy (1A, 40mH) 20 mJ AVL T , T Operating and Storage Temperature Range -55 to 150 °C J STG T Maximum Temperature for Soldering L Leads at 0.063in (1.6mm) from Case for 10s 300 °C CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2003 ISL9R860PF2 Rev. A
