ISL9R860P2 ,8A, 600V Stealth Diodeapplications. The o Operating Temperature . . . . . . . . . . . . . . . 175 CStealth™ family exhib ..
ISL9R860PF2 ,8A, 600V Stealth DiodeFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2b aThe ISL9R860PF2 i ..
ISL9R860S3S ,8A, 600V Stealth Diodeapplications. The low I and short t phase RRM a Switch Mode Power Suppliesreduce loss in switching ..
ISL9R860S3ST ,8A, 600V Stealth Single Diodeapplications. The o• Operating Temperature . . . . . . . . . . . . . . . 175 CStealth™ family exhib ..
ISL9R860S3ST ,8A, 600V Stealth Single Diodeapplications. The low I and short t phase RRM a• Switch Mode Power Suppliesreduce loss in switching ..
ISL9V3040D3S ,EcoSPARK TM 300mJ, 400V, N-Channel Ignition IGBTFeaturesThis device is intended for use in automotive ignition circuits,specifically as a coil driv ..
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
ISL9R860P2
8A, 600V Stealth Diode
ISL9R860P2, ISL9R860S2, ISL9R860S3S April 2002 ISL9R860P2, ISL9R860S2, ISL9R860S3S 8A, 600V Stealth™ Diode General Description Features Soft Recovery. . . . . . . . . . . . . . . . . . . . t / t > 2.5 b a The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in Fast Recovery . . . . . . . . . . . . . . . . . . . . t < 25ns rr high frequency hard switched applications. The o Operating Temperature . . . . . . . . . . . . . . . 175 C Stealth™ family exhibits low reverse recovery current (I ) and exceptionally soft recovery under typical RRM Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V operating conditions. Avalanche Energy Rated This device is intended for use as a free wheeling or boost diode in power supplies and other power Applications switching applications. The low I and short t phase RRM a Switch Mode Power Supplies reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions Hard Switched PFC Boost Diode under which the diode may be operated without the use UPS Free Wheeling Diode of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the Motor Drive FWD most efficient and highest power density design at lower cost.SMPS FWD Formerly developmental type TA49409. Snubber Diode Package Symbol JEDEC TO-263AB JEDEC TO-220AC JEDEC STYLE TO-262 K ANODE ANODE CATHODE CATHODE CATHODE CATHODE (FLANGE) (FLANGE) A CATHODE N/C (FLANGE) ANODE Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R o I Average Rectified Forward Current (T = 147 C) 8 A F(AV) C I Repetitive Peak Surge Current (20kHz Square Wave) 16 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A FSM P Power Dissipation 85 W D E Avalanche Energy (1A, 40mH) 20 mJ AVL T , T Operating and Storage Temperature Range -55 to 175 °C J STG T Maximum Temperature for Soldering L T Leads at 0.063in (1.6mm) from Case for 10s 300 °C PKG Package Body for 10s, See Techbrief TB334 260 °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2002 ISL9R860P2, ISL9R860S2, ISL9R860S3S Rev. C
