ISL9R460S3S ,4A,600V Stealth Diodeapplications. The low I and short t phase RRM a• Switch Mode Power Suppliesreduce loss in switching ..
ISL9R860P2 ,8A, 600V Stealth Diodeapplications. The o Operating Temperature . . . . . . . . . . . . . . . 175 CStealth™ family exhib ..
ISL9R860PF2 ,8A, 600V Stealth DiodeFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2b aThe ISL9R860PF2 i ..
ISL9R860S3S ,8A, 600V Stealth Diodeapplications. The low I and short t phase RRM a Switch Mode Power Suppliesreduce loss in switching ..
ISL9R860S3ST ,8A, 600V Stealth Single Diodeapplications. The o• Operating Temperature . . . . . . . . . . . . . . . 175 CStealth™ family exhib ..
ISL9R860S3ST ,8A, 600V Stealth Single Diodeapplications. The low I and short t phase RRM a• Switch Mode Power Suppliesreduce loss in switching ..
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
ISL9R460S3S
4A,600V Stealth Diode
ISL9R460P2, ISL9R460S2, ISL9R460S3S January 2002 ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth™ Diode General Description Features • Soft Recovery. . . . . . . . . . . . . . . . . . . . . t / t > 3 b a The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in • Fast Recovery . . . . . . . . . . . . . . . . . . . . t < 20ns rr high frequency hard switched applications. The o • Operating Temperature . . . . . . . . . . . . . . . 175 C Stealth™ family exhibits low reverse recovery current (I ) and exceptionally soft recovery under typical RRM • Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V operating conditions. • Avalanche Energy Rated This device is intended for use as a free wheeling or boost diode in power supplies and other power Applications switching applications. The low I and short t phase RRM a • Switch Mode Power Supplies reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions • Hard Switched PFC Boost Diode under which the diode may be operated without the use • UPS Free Wheeling Diode of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the • Motor Drive FWD most efficient and highest power density design at lower cost. • SMPS FWD Formerly developmental type TA49408. • Snubber Diode Package Symbol JEDEC TO-263AB JEDEC TO-220AC JEDEC STYLE TO-262 K ANODE ANODE CATHODE CATHODE CATHODE CATHODE (FLANGE) (FLANGE) A CATHODE N/C (FLANGE) ANODE Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R I Average Rectified Forward Current 4 A F(AV) I Repetitive Peak Surge Current (20kHz Square Wave) 8 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 50 A FSM P Power Dissipation 58 W D E Avalanche Energy (1A, 20mH) 10 mJ AVL T , T Operating and Storage Temperature Range -55 to 175 ˚C J STG T Maximum Temperature for Soldering L T Leads at 0.063in (1.6mm) from Case for 10s 300 ˚C PKG Package Body for 10s, See Techbrief TB334 260 ˚C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2002 ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B
