ISL9R3060G2 ,30A, 600V Stealth Diodeapplications. The Stealth™ family exhibits low o Operating Temperature . . . . . . . . . . . . . . ..
ISL9R3060P2 ,30A, 600V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
ISL9R460P2 ,4A,600V Stealth Diodeapplications. The low I and short t phase RRM a• Switch Mode Power Suppliesreduce loss in switching ..
ISL9R460P2 ,4A,600V Stealth Diodeapplications. The o• Operating Temperature . . . . . . . . . . . . . . . 175 CStealth™ family exhib ..
ISL9R460PF2 ,4A, 600V Stealth ™, Diode, TO-220F PackageFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t / t > 3b aThe ISL9R460P ..
ISL9R460S3S ,4A,600V Stealth Diodeapplications. The low I and short t phase RRM a• Switch Mode Power Suppliesreduce loss in switching ..
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
ISL9R3060G2
30A, 600V Stealth Diode
ISL9R3060G2, ISL9R3060P2 May 2002 ISL9R3060G2, ISL9R3060P2 30A, 600V Stealth™ Diode General Description Features Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t / t > 1.2 b a The ISL9R3060G2 and ISL9R3060P2 are Stealth™ diodes optimized for low loss performance in high frequency hard Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t < 35ns rr switched applications. The Stealth™ family exhibits low o Operating Temperature . . . . . . . . . . . . . . . . . . . . 175 C reverse recovery current (I ) and exceptionally soft RM(REC) Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V recovery under typical operating conditions. Avalanche Energy Rated This device is intended for use as a free wheeling or boost diode in power supplies and other power switching Applications applications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Supplies in switching transistors. The soft recovery minimizes ringing, Hard Switched PFC Boost Diode expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. UPS Free Wheeling Diode Consider using the Stealth™ diode with an SMPS IGBT to Motor Drive FWD provide the most efficient and highest power density design at lower cost.SMPS FWD Snubber Diode Formerly developmental type TA49411. Package Symbol JEDEC STYLE TO-247 JEDEC TO-220AC ANODE K CATHODE CATHODE ANODE CATHODE (FLANGE) CATHODE (BOTTOM SIDE METAL) A Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Repetitive Peak Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R o I Average Rectified Forward Current (T = 125 C) 30 A F(AV) C I Repetitive Peak Surge Current (20kHz Square Wave) 70 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 325 A FSM P Power Dissipation 200 W D E Avalanche Energy (1A, 40mH) 20 mJ AVL T , T Operating and Storage Temperature Range -55 to 175 °C J STG T Maximum Temperature for Soldering L T Leads at 0.063in (1.6mm) from Case for 10s 300 °C PKG Package Body for 10s, See Techbrief TB334 260 °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2002 ISL9R3060G2, ISL9R3060P2 Rev. C
