ISL9R30120G2 ,30A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
ISL9R3060G2 ,30A, 600V Stealth Diodeapplications. The Stealth™ family exhibits low o Operating Temperature . . . . . . . . . . . . . . ..
ISL9R3060P2 ,30A, 600V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
ISL9R460P2 ,4A,600V Stealth Diodeapplications. The low I and short t phase RRM a• Switch Mode Power Suppliesreduce loss in switching ..
ISL9R460P2 ,4A,600V Stealth Diodeapplications. The o• Operating Temperature . . . . . . . . . . . . . . . 175 CStealth™ family exhib ..
ISL9R460PF2 ,4A, 600V Stealth ™, Diode, TO-220F PackageFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t / t > 3b aThe ISL9R460P ..
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
ISL9R30120G2
30A, 1200V Stealth Diode
ISL9R30120G2 May 2002 ISL9R30120G2 30A, 1200V Stealth™ Diode General Description Features Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t / t > 4.5 b a The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t < 56ns rr Stealth™ family exhibits low reverse recovery current o Operating Temperature . . . . . . . . . . . . . . . . . . . . 150 C (I ) and exceptionally soft recovery under typical RM(REC) Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V operating conditions. Avalanche Energy Rated This device is intended for use as a free wheeling or boost diode in power supplies and other power switching Applications applications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Supplies in switching transistors. The soft recovery minimizes ringing, Hard Switched PFC Boost Diode expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. UPS Free Wheeling Diode Consider using the Stealth™ diode with a 1200V NPT IGBT to Motor Drive FWD provide the most efficient and highest power density design at lower cost.SMPS FWD Formerly developmental type TA49415. • Snubber Diode Package Symbol JEDEC STYLE 2 LEAD TO-247 ANODE CATHODE K CATHODE (BOTTOM SIDE METAL) A Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Repetitive Peak Reverse Voltage 1200 V RRM V Working Peak Reverse Voltage 1200 V RWM V DC Blocking Voltage 1200 V R o I Average Rectified Forward Current (T = 80 C) 30 A F(AV) C I Repetitive Peak Surge Current (20kHz Square Wave) 70 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 325 A FSM P Power Dissipation 166 W D E Avalanche Energy (1A, 40mH) 20 mJ AVL T , T Operating and Storage Temperature Range -55 to 150 °C J STG T Maximum Temperature for Soldering L T Leads at 0.063in (1.6mm) from Case for 10s 300 °C PKG Package Body for 10s, See Application Note AN-7528 260 °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2002 ISL9R30120G2 Rev. A
