ISL9R18120P2 ,18A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
ISL9R30120G2 ,30A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
ISL9R3060G2 ,30A, 600V Stealth Diodeapplications. The Stealth™ family exhibits low o Operating Temperature . . . . . . . . . . . . . . ..
ISL9R3060P2 ,30A, 600V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
ISL9R460P2 ,4A,600V Stealth Diodeapplications. The low I and short t phase RRM a• Switch Mode Power Suppliesreduce loss in switching ..
ISL9R460P2 ,4A,600V Stealth Diodeapplications. The o• Operating Temperature . . . . . . . . . . . . . . . 175 CStealth™ family exhib ..
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
ISL9R18120P2
18A, 1200V Stealth Diode
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S May 2002 ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth™ Diode General Description Features Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t / t > 5.0 b a The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t < 45ns rr frequency hard switched applications. The Stealth™ family o Operating Temperature . . . . . . . . . . . . . . . . . . . . 150 C exhibits low reverse recovery current (I ) and RM(REC) Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V exceptionally soft recovery under typical operating conditions. Avalanche Energy Rated This device is intended for use as a free wheeling or boost diode in power supplies and other power switching Applications applications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Supplies in switching transistors. The soft recovery minimizes ringing, Hard Switched PFC Boost Diode expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. UPS Free Wheeling Diode Consider using the Stealth™ diode with a 1200V NPT IGBT to Motor Drive FWD provide the most efficient and highest power density design at lower cost.SMPS FWD Snubber Diode Formerly developmental type TA49414. Package Symbol JEDEC TO-263AB 2 LEAD TO-247 JEDEC TO-220AC ANODE ANODE K CATHODE CATHODE CATHODE (FLANGE) N / C A ANODE CATHODE CATHODE (BOTTOM SIDE (FLANGE) METAL) Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Repetitive Peak Reverse Voltage 1200 V RRM V Working Peak Reverse Voltage 1200 V RWM V DC Blocking Voltage 1200 V R o I Average Rectified Forward Current (T = 92 C) 18 A F(AV) C I Repetitive Peak Surge Current (20kHz Square Wave) 36 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 200 A FSM P Power Dissipation 125 W D E Avalanche Energy (1A, 40mH) 20 mJ AVL T , T Operating and Storage Temperature Range -55 to 150 °C J STG T Maximum Temperature for Soldering L T Leads at 0.063in (1.6mm) from Case for 10s 300 °C PKG Package Body for 10s, See Application Note AN-7528 260 °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2002 ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. A
