ISL9R1560S3ST ,15A, 600V Stealth Single Diodeapplications. The low I and short t phase reduce loss RM(REC) a Hard Switched PFC Boost Diodein sw ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The Stealth™ family o Operating Temperature . . . . . . . . . . . . . . . . . . . . ..
ISL9R18120P2 ,18A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
ISL9R30120G2 ,30A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
ISL9R3060G2 ,30A, 600V Stealth Diodeapplications. The Stealth™ family exhibits low o Operating Temperature . . . . . . . . . . . . . . ..
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
ISL9R1560S3ST
15A, 600V Stealth Single Diode
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S November 2002 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S 15A, 600V Stealth™ Diode General Description Features Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t / t > 1.2 b a The ISL9R1560G2, ISL9R1560P2, ISL9R1560S2 and ISL9R1560S3S are Stealth™ diodes optimized for low loss Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t < 30ns rr performance in high frequency hard switched applications. The o Operating Temperature . . . . . . . . . . . . . . . . . . . . 175 C Stealth™ family exhibits low reverse recovery current Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V (I ) and exceptionally soft recovery under typical RM(REC) operating conditions.Avalanche Energy Rated This device is intended for use as a free wheeling or boost Applications diode in power supplies and other power switching Switch Mode Power Supplies applications. The low I and short t phase reduce loss RM(REC) a Hard Switched PFC Boost Diode in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may UPS Free Wheeling Diode be operated without the use of additional snubber circuitry. Motor Drive FWD Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at SMPS FWD lower cost. Snubber Diode Formerly developmental type TA49410. Package Symbol JEDEC STYLE TO-247 JEDEC TO-220AC ANODE K CATHODE CATHODE ANODE CATHODE (FLANGE) CATHODE (BOTTOM SIDE METAL) A JEDEC STYLE TO-262 JEDEC TO-263AB ANODE CATHODE CATHODE (FLANGE) CATHODE N/C (FLANGE) ANODE Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Repetitive Peak Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R o I Average Rectified Forward Current (T = 145 C) 15 A F(AV) C I Repetitive Peak Surge Current (20kHz Square Wave) 30 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 200 A FSM ©2002 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
