ISL9R1560PF2 ,15A, 600V Stealth DiodeApplicationsphase reduce loss in switching transistors. The soft Switch Mode Power Suppliesrecove ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2b aThe ISL9R1560PF2 ..
ISL9R1560S3ST ,15A, 600V Stealth Single Diodeapplications. The low I and short t phase reduce loss RM(REC) a Hard Switched PFC Boost Diodein sw ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The Stealth™ family o Operating Temperature . . . . . . . . . . . . . . . . . . . . ..
ISL9R18120P2 ,18A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
ISL9R1560PF2
15A, 600V Stealth Diode
ISL9R1560PF2 April 2003 ISL9R1560PF2 15A, 600V Stealth™ Diode General Description Features Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2 b a The ISL9R1560PF2 is a Stealth™ diode optimized for Fast Recovery. . . . . . . . . . . . . . . . . . . . . . . t < 30ns low loss performance in high frequency hard switched rr o applications. The Stealth™ family exhibits low reverse Operating Temperature. . . . . . . . . . . . . . . . . . 150 C recovery current (I ) and exceptionally soft RM(REC) Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V recovery under typical operating conditions. Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV This device is intended for use as a free wheeling or Avalanche Energy Rated boost diode in power supplies and other power switching applications. The low I and short t RM(REC) a Applications phase reduce loss in switching transistors. The soft Switch Mode Power Supplies recovery minimizes ringing, expanding the range of Hard Switched PFC Boost Diode conditions under which the diode may be operated UPS Free Wheeling Diode without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to Motor Drive FWD provide the most efficient and highest power density SMPS FWD design at lower cost. Snubber Diode Formerly developmental type TA49410. Package Symbol TO-220F K A CATHODE ANODE Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Repetitive Peak Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R o I Average Rectified Forward Current (T = 25 C) 15 A F(AV) C I Repetitive Peak Surge Current (20kHz Square Wave) 30 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 200 A FSM P Power Dissipation 30 W D E Avalanche Energy (1A, 40mH) 20 mJ AVL T , T Operating and Storage Temperature Range -55 to 150 °C J STG T Maximum Temperature for Soldering L Leads at 0.063in (1.6mm) from Case for 10s 300 °C CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2003 ISL9R1560PF2 Rev. A1
