ISL9N310AS3ST ,N-Channel Logic Level PWM Optimized UltraFET?Trench Power MOSFETsApplications• DC/DC converters•C (Typ) = 1800pFISSSOURCESOURCEDRAINDRAINDRAIN (FLANGE)GATE GATEDRAI ..
ISL9R1560P2 ,15A, 600V Stealth Diodeapplications. The o Operating Temperature . . . . . . . . . . . . . . . . . . . . 175 CStealth™ fa ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeApplicationsphase reduce loss in switching transistors. The soft Switch Mode Power Suppliesrecove ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2b aThe ISL9R1560PF2 ..
ISL9R1560S3ST ,15A, 600V Stealth Single Diodeapplications. The low I and short t phase reduce loss RM(REC) a Hard Switched PFC Boost Diodein sw ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
K10103B , High Reliability Photocoupler
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
ISL9N310AS3ST
N-Channel Logic Level PWM Optimized UltraFET?Trench Power MOSFETs
ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 January 2002 ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET • Fast switching technology and features low gate charge while maintaining •r = 0.008Ω (Typ), V = 10V low on-resistance. DS(ON) GS •r = 0.0115Ω (Typ), V = 4.5V Optimized for switching applications, this device improves DS(ON) GS the overall efficiency of DC/DC converters and allows •Q (Typ) = 17nC, V = 5V operation to higher switching frequencies. g GS •Q (Typ) = 5.4nC gd Applications • DC/DC converters •C (Typ) = 1800pF ISS SOURCE SOURCE DRAIN DRAIN DRAIN (FLANGE) GATE GATE DRAIN D (FLANGE) G GATE SOURCE DRAIN S (FLANGE) TO-263AB TO-220AB TO-262AA MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 62 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 4.5V) 36 A D C GS o o Continuous (T = 25 C, V = 10V, R = 43 C/W) 13.5 A C GS θJA Pulsed Figure 4 A Power dissipation 70 W P D o o Derate above 25 C 0.47 W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220, TO-262, TO-263 2.14 C/W θJC o R Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity N310AS ISL9N310AS3ST TO-263AB 330mm 24mm 800 units N310AS ISL9N310AS3 TO-262AA Tube N/A 50 N310AP ISL9N310AP3 TO-220AB Tube N/A 50 ©2002 Rev. B, January 2002
