ISL9N308AD3 ,N-Channel Logic Level UltraFET R Trench Power MOSFETs 30V, 50A, 8mOhmApplications• DC/DC convertersC (Typ) = 2600pFISSDDGGI-PAKSD-PAK (TO-251AA) STO-252(TO-252)G DSMOS ..
ISL9N310AS3ST ,N-Channel Logic Level PWM Optimized UltraFET?Trench Power MOSFETsApplications• DC/DC converters•C (Typ) = 1800pFISSSOURCESOURCEDRAINDRAINDRAIN (FLANGE)GATE GATEDRAI ..
ISL9R1560P2 ,15A, 600V Stealth Diodeapplications. The o Operating Temperature . . . . . . . . . . . . . . . . . . . . 175 CStealth™ fa ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeApplicationsphase reduce loss in switching transistors. The soft Switch Mode Power Suppliesrecove ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2b aThe ISL9R1560PF2 ..
ISL9R1560S3ST ,15A, 600V Stealth Single Diodeapplications. The low I and short t phase reduce loss RM(REC) a Hard Switched PFC Boost Diodein sw ..
K10103B , High Reliability Photocoupler
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
ISL9N308AD3
N-Channel Logic Level UltraFET R Trench Power MOSFETs 30V, 50A, 8mOhm
ISL9N308AD3 / ISL9N308AD3ST June 2002 PWM Optimized ISL9N308AD3 / ISL9N308AD3ST ® N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFETFast switching technology and features low gate charge while maintaining r = 0.0064Ω (Typ), V = 10V low on-resistance. DS(ON) GS r = 0.010Ω (Typ), V = 4.5V Optimized for switching applications, this device improves DS(ON) GS the overall efficiency of DC/DC converters and allows Q (Typ) = 24nC, V = 5V operation to higher switching frequencies. g GS Q (Typ) = 8nC gd Applications • DC/DC converters C (Typ) = 2600pF ISS D D G G I-PAK S D-PAK (TO-251AA) S TO-252 (TO-252) G DS MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 50 A Continuous (T = 25 C, V = 10V) Note 1 C GS o I Continuous (T = 100 C, V = 4.5V) Note 1 48 A D C GS o o Continuous (T = 25 C, V = 10V, R = 52 C/W) 14 A C GS θJC Pulsed Figure 4 A Power dissipation 100 W P D o o Derate above 25 C 0.67 W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252, TO-251 1.5 C/W θJC o R Thermal Resistance Junction to Ambient TO-252, TO-251 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity N308AD ISL9N308AD3ST TO-252AA 330mm 16mm 2500 units N308AD ISL9N308AD3 TO-251AA Tube N/A 75 units ©2002 ISL9N308AD3 / ISL9N308AD3ST Rev C
