IRS2304SPBF ,Half Bridge Driver, high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channelsElectrical CharacteristicsV (V , V ) = 15 V and T = 25 °C unless otherwise specified. The V , V and ..
IRS2308 ,High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-Lead packageElectrical CharacteristicsV (V , V ) = 15 V, V = COM, C = 1000 pF, T = 25 °C, DT = V unless otherw ..
IRS2308PBF , HALF-BRIDGE DRIVER
IRS2308STRPBF ,High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-Lead packageFeaturesPackages• Floating channel designed for bootstrap operationFully operational to +600 V•Tole ..
IRS2332 ,High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us. IRS233(0,2)(D)(S&J)PbF ..
IRS2332JTRPBF ,High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.Features Floating channel designed for bootstra ..
ISPPAC-POWR1014-01TN48I , In-System Programmable Power Supply Supervisor, Reset Generator and Sequencing Controller
ISPPAC-POWR1208P1-01TN44I , In-System Programmable Power Supply Sequencing Controller and Precision Monitor
ISQ202 , HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISR1040C , SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 10 Amperes
ISR1040C , SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 10 Amperes
IT136 ,Monolithic Dual PNP General Purpose AmplifierFEATURES ABSOLUTE MAXIMUM RATINGS
q High Gain at Low Current (T A--25''C unless otherwise noted)
..
IRS2304-IRS2304SPBF
Half Bridge Driver, high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels
Data Sheet No. PD60277
International
191-2 Rectifier IRS2304(S)PbF
Features HALF-BRIDGE DRIVER
q Floating channel designed for bootstrap operation Product Summary
to +600 V
q Tolerant to negative transient voltage, dV/dt
immune VOFFSET 600 V max.
q Gate drive supply range from 10 V to 20 V kyr/- (min) 60 mA/130 mA
q Undervoltage lockout for both channels -
q 3.3 V, 5 V, and 15 V input logic input compatible VOUT . 10 V 20 V
q Cross-conduction prevention logic Delay Matching 50 ns
q Matched propagation delay for both channels Internal deadtime 100 ns
. Lower di/dt gate driver for better noise immunity
. Internal 100 ns deadtime ton/off (typ.) 150 ns/l 50 ns
q Output in phase with input
. RoHS compliant Package
Description
The IRS2304 is a high voltage, high speed power
MOSFET and IGBT driver with independent high-side
and Iow-side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction.
The logic input is compatible with
Feature Comparison
standard CMOS or LSTTL output, CrOSS; D dti A
down to 3.3 V logic. The output driver Part tie 2325:5232 Ginsme Ground Pins ttr
features a high pulse current buffer logic
stage designed for minimLim driver 2106/2301 HlN/LIN no none d,e/M 220/200
cross-conduction. The floating chan- 2211; - Internal 540 SEOM
nel can be used to drive an N-chan- 21084 HIN/LIN yes Programmable 540-5000 Vss/COM 220/200
nel power MOSFET or IGBT in the 2109/2302 lN/S_D Intemal540 COM 750/200
high-side configuration which oper- 21094 yes Programmable 540-5000 Vss/COM
ates up to 600 V. 2304 HIN/LIN yes Internal 100 COM 160/140
Block Diagram uito6_00V
Vcco _
LIN LIN VB __ I ;;
HlNc; HIN HO ’“
VCC TO
VS LOAD
COM LO
(Refer to Lead Assignments for cor-
rect pin configuration). These dia-
grams show electrical connections
only. Please refer to our Application
Notes and DesignTips for proper cir-
cuit board layout.
1
International
TOR Rectifier
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions.
IRS2304(S)PbF
Symbol Definition Min. Max. Units
Vs High-side offset voltage VB - 25 VB + 0.3
VB High-side floating supply voltage 0.3 625
VH0 High-side floating output voltage HO Vs - 0.3 VB + 0.3
VCC Low-side and logic fixed supply voltage -0.3 25 V
VLo Low-side output voltage LO -0.3 Vcc + 0.3
VIN Logic input voltage (HIN, LIN) -0.3 Vcc + 0.3
Com Logic ground Vcc -25 Vcc + 0.3
st/dt Allowable offset supply voltage transient - 50 V/ns
8-read SOIC - 0.625
PD Package power dissipation @ TA 3 +25 °C W
8-tead PDIP - 1.0
. . 8-Lead SOIC - 200
RthJA Thermal resistance, junction to ambient ''C/W
8-Lead PDIP - 125
TJ Junction temperature - 150
Ts Storage temperature -50 150 °C
TL Lead temperature (soldering, 10 seconds) - 300
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. l. For proper operation the device should be used within the
recommended conditions. The Vs offset rating is tested with all supplies biased at 15 V differential.
Symbol Definition Min. Max. Units
VB High-side floating supply voltage Vs + 10 Vs + 20
vs High-side floating supply offset voltage Note 1 600
VH0 High-side (HO) output voltage vs "
VLo Low-side (LO) output voltage COM Vcc V
VIN Logic input voltage (HIN, LIN) COM V00
V00 Low-side supply voltage 10 20
TA Ambient temperature -40 125 "C
Note 1: Logic operational for Vs of COM -5 V to COM +600 V. Logic state held for Vs of COM -5 V to COM A/BS.
