IRS21844STRPBF ,Half Bridge DriverData Sheet No. PD60252 revA/IRS2184 IRS21844(S)PbFHALF-BRIDGE DRIVER
IRS2184PBF , HIGH AND LOW SIDE DRIVER
IRS2184S , HIGH AND LOW SIDE DRIVER
IRS21850 ,600V Single High Side Driver IC with propagation delay matched output channels in a 8-Lead SOIC packageFeatures Product Summary • Gate drive supply range from 10 V to 20 V Topology Single High Side • U ..
IRS21850SPBF ,600V Single High Side Driver IC with propagation delay matched output channels in a 8-Lead SOIC packageBlock Diagram 7 Input/Output Pin Equivalent Circuit Diagram 8 Lead Definitions 9 Lead Assignments 9 ..
IRS21851 ,600V Single High Side Driver IC with propagation delay matched output channels in a 8-Lead SOIC packageFeaturesProduct Summary• Gate drive supply range from 10 V to 20 V• Undervoltage lockout for V an ..
ISPLSI8840-60LB432 , In-System Programmable SuperBIG™ High Density PLD
ISPLSI8840-90LB432 , In-System Programmable SuperBIG™ High Density PLD
ISPPAC10-01PI , In-System Programmable Analog Circuit
ISPPAC10-01SI , In-System Programmable Analog Circuit
ispPAC20-01JI , In-System Programmable Analog Circuit
ISPPAC30-01PI , In-System Programmable Analog Circuit
IRS2184-IRS21844-IRS21844STRPBF
Half Bridge Driver, SoftTurn-On, Single Input Plus Inverting Shut-Down, 400ns Deadtime in a 8-pin DIP package
International
19R Rectifier
Data Sheet No. P060252 revA
IRS2184/lRS21844(S)PbF
Featu res
HALF-BRIDGE DRIVER
Packages
q Floating channel designed for bootstrap operation
. Fully operational to +600 V
q Tolerant to negative transient voltage, dV/dt immune
. Gate drive supply range from 10 V to 20 V
o Undervoltage lockout for both channels
. 3.3 V and 5 V input logic compatible
q Matched propagation delay for both channels
. Logic and power ground +/- 5 V offset
q Lower di/dt gate driver for better noise immunity
. Output source/sink current capability 1.4 A/1.8 A
o RoHS compliant
ol os _ l
8-Lead PDIP
. IRS2184
14-Lead PDIP l l ,
IRS21844
14-Lead SOIC
IRS21844S
8-Lead SOIC
Description IRS2184S
The lRS2184/lRS21844 are high volt-
age, high speed power MOSFET and Feature Comparison
IGBT drivers with dependent high- and Cross; .
low-side referenced output channels. Part tr] Cg,eitiig," D9315” Ground Pins tid
Proprietary HVIC and latch immune logic
CMOS technologies enable ruggedized 22123114 HIN/LIN no none stggM 180/220
monolithic construction. The logic in- 2183 - Internal400 COM
HIN/LIN es 180/220
put is compatible with standard CMOS 21834 - y Program 400-5000 VSSICOM
orLSTTL output, down to 3.3V logic. The 2211;: lN/SD yes pr/ner,,'",),'),),', stggM 680/270
output drivers feature a high pulse cur-
rent buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Typical Connection
upm_sgov
Vcc Vi H
- Vcc Vs - T,
IN IN HO A
a ST) vs
COM LO H
IRS2184 ’7
Vcc t Va,
IN \ IN
50 ST)
(Refer to Lead Assignments for correct DT
configuration).These diagrams show V if v
electrical connections only Please refer ss Rm ss
to our Application Notes and DesignTips
upto§gov
'fi'- IRS21844 (i-lar; "f"
VBWF l
VS UT"
COM '7:
for proper circuit board layout.
International
TOR Rectifier
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions.
IRS2184/lRS21844(S)PbF
Symbol Definition Min. Max. Units
VB High-side floating absolute voltage -0.3 620 (Note 1)
Vs High-side floating supply offset voltage VB - 20 V3 + 0.3
VH0 High-side floating output voltage Vs - 0.3 VB + 0.3
Va: Low-side and logic fixed supply voltage -0.3 20 (Note 1)
VLo Low-side output voltage -0.3 Vcc + 0.3 V
DT Programmable dead-time pin voltage (IRS21844 only) Vss - 0.3 VCC +0.3
VIN Logic input voltage (IN & s_D) l/ss - 0.3 Vcc + 0.3
Vss Logic ground (IRS21844 only) Vcc -20 VCC +0.3
dl/s/dt Allowable offset supply voltage transient - 5O V/ns
(8-Iead PDIP) - 1.0
PD Package power dissipation @ TA f +25 °C (8-Iead SOIC) - 0.625 W
(14-Iead PDIP) - 1.6
(14-Iead SOIC) - 1.0
(8-Iead PDIP) - 125
. . . . (8-Iead SOIC) - 200
RthJA Thermal resistance, junction to ambient oc/W
(14-Iead PDIP) - 75
(14-lead SOIC) - 120
TJ Junction temperature - 150
Ts Storage temperature -50 150 "C
TL Lead temperature (soldering, 10 seconds) - 300
Note 1: All supplies are fully tested at 25 V and an internal 20 V clamp exists for each supply.
www.irf.ggm 2