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IRS2153DPBF
Self-Oscillating Half Bridge Driver, 1.1碌s Deadtime in a 8-pin DIP package
Data Sheet No. P060238 revE
IRS2153(1)D(S)PbF
International
1:23 Rectifier
SELF-OSCILLATING HALF-BRIDGE DRIVER IC
Features Product Summary
" Integrated 600 V half-bridge gate driver
I: CT, RT programmable oscillator VOFFSET 600 V Max
II 15.4 V Zener clamp on Vcc
" Micropower startup Duty cycle 50%
II Non-latched shutdown on c, pin (1/6th Vcc)
u Internal bootstrgp "l . Driver sourcelsink 180 m Al260 m A typ.
" Excellent latch immunity on all inputs and outputs current
II +/- 50 V/ns dV/dt immunity
V 1 .4 V .
n ESD protection on all pins clamp 5 typ
II 8-lead SOIC or PDIP acka e 1.1 . IR 21 D
. p g Deadtime ws typ ( S 53 )
l: Internal deadtime 0.6 ps typ. (IRS21531D)
Description Package
The IRS2153(1)D is based on the popular IR2153 self-
oscillating half-bridge gate driver IC using a more
advanced silicon platform, and incorporates a high _
voltage half-bridge gate driver with a front end oscillator ““1,\ V' ,1
similar to the industry standard CMOS 555 timer. HVIC I ( Is, ', "
and latch immune CMOS technologies enable rugged l l
PDIP8 $08
monolithic construction. The output driver features a high
IRS2153(1)DPbF IRS2153(1)DSPbF
pulse current buffer stage designed for minimum driver
cross-conduction. Noise immunity is achieved with low
di/dt peak of the gate drivers.
Typical Connection Diagram
+ AC Rectified Line
VCC U VB
‘%1 0 D hem
RT HO MHS
2 cr..., Zl"o----)',i-
RT f2 L
CT 3 F TIVS f"V"N'"h,
cvcc N -"]
7: CT tD RL
COM m LO _ MLS g
H: - E Lo-Fr-,
- AC Rectified Line
International IRS2'153(1)D
IEER Rectifier
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions.
Parameter
Symbol Definition Min. Max. Units
VB High side floating supply voltage -0.3 625
Vs High side floating supply offset voltage VB - 25 VB + 0.3 V
W, High side floating output voltage Vs - 0.3 V3 + 0.3
W, Low side output voltage -0.3 Vcc + 0.3
IRT RT pin current -5 5 mA
VRT RT pin voltage -0.3 Vcc + 0.3
VCT CT pin voltage -0.3 Vcc + 0.3 V
Icc Supply current (Note 1) --- 20
IOMAX Maximum ailowable current at LO and HO due to external -500 500 mA
power transistor Miller effect.
dVs/dt Allowable offset voltage slew rate -50 50 V/ns
Po Maximum power dissipation @ TA f +25 "C, 8-Pin DIP - 1.0
PD Maximum power dissipation @ TA 3 +25 "C, 8-Pin SOIC --- 0.625 W
RthJA Thermal resistance, junction to ambient, 8-Pin DIP - 85
RthJA Thermal resistance, junction to ambient, 8-Pin SOIC --- 128 OCNV
To Junction temperature -55 150
Ts Storage temperature -55 150 °C
TL Lead temperature (soldering, 10 seconds) - 300
Note 1: This IC contains a zener clamp structure between the chip Vcc and COM which has a nominal
breakdown voltage of 15.4 V. Please note that this supply pin should not be driven by a DC, low
impedance power source greater than the vamp specified in the Electrical Characteristics section.
