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IRS20124S
DIGITAL AUDIO DRIVER WITH DISCRETE DEAD-TIME AND PROTECTION
International
ISER Rectifier
Data Sheet No. PD60240 revA
IRS20124S(PbF)
DIGITAL AUDIO DRIVER WITH DISCRETE DEAD-11ME AND PROTECTION
Featu res
o 200Vhigh voltageratings deliverupto 1000VV
output power in Class D audio amplifier
applications
Integrated dead-time generation and bi-directional
ouercurrentsensing simplify design
Programmable compensated preset dead-time for
improved THD performances over temperature
High noise immunity
Shutdown function protects devices from overload
conditions
Operates up to 1MHz
3.3V/5V logic compatible input
Typical Application Diagram
Product Summary
Bi-directional Over
Current Sensing
VSUPPLY 200V max.
Ityrl- 1A/1.2Atyp.
Selectable Dead Time
15l25l35l45ns typ.
Prop Delay Time 70ns typ.
Package
'e"f,1ts
14-Lead SOIC
LO Vcc
IRS 20124
IRS20124S(PbF) International
IEER Rectifier
Description
The IR820124S is a high voltage, high speed power MOSFET driver with internal dead-time and shutdown
functions specially designed for Class D audio amplifier applications.
The internal dead time generation block provides accurate gate switch timing and enables tight dead-time
settings for better THD performances.
In order to maximize other audio performance characteristics, all switching times are designed for immunity
from external disturbances such as VCC perturbation and incoming switching noise on the DT pin. Logic
inputs are compatible with LSTTL output or standard CMOS down to 3.0V without speed degradation. The
output drivers feature high current buffers capable of sourcing 1.0A and sinking 1.2A. Internal delays are
optimized to achieve minimal dead-time variations. Proprietary HVIC and latch immune CMOS technologies
guarantee operation down to VS: -AN, providing outstanding capabilities of latch and surge immunities with
rugged monolithic construction.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. All currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition Min. Max. Units
VB High side floating supply voltage -0.3 220 V
Vs High side floating supply voltage VB-20 VB+0.3 V
VH0 High side floating output voltage Vs-0.3 VB+0.3 V
VCC Low side fixed supply voltage -0.3 20 V
VLo Low side output voltage -0.3 Vcc+0.3 V
VIN Input voltage -0.3 Vcc+0.3 V
Voc OC pin input voltage -0.3 Vcc+0.3 V
VOCSET1 OCSET1 pin input voltage -0.3 Vcc+0.3 V
VOCSETZ OCSET2 pin input voltage -0.3 Vcc+0.3 V
dl/s/dt Allowable Vs voltage slew rate - 50 V/ns
Pd Maximum power dissipation - 1.25 W
RthJA Thermal resistance, Junction to ambient - 100 °CNV
To Junction Temperature - 150 °C
Ts Storage Temperature -55 150 ''C
TL Lead temperature (Soldering, 10 seconds) - 300 'C
2
