IRLZ44ZSTRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRLZ44ZPbFIRLZ44ZSPbF IRLZ44ZLPbFAbsolute Maximum RatingsParameter Max. UnitsContinuou ..
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IRLZ44ZSTRLPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
PD - 95539A
" ... IRLZ44ZPbF
TOR Rectifier |RLZ44ZSPbF
IRLZ44ZLPb F
Features
. Logic Level HEXFET8 Power MOSFET
. Advanced Process Technology D
. Ultra Low On-Resistance V - 55V
. 175°C Operating Temperature DSS -
. Fast Switching
o Repetitive Avalanche Allowed up to ijax ' A RDS(on) = 13.5mQ
o Lead-Free G
Description s ID = 51A
This H EXFETO Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance persilicon area. Additionalfeatures = '
of this design are a 175°C junction operating $, "gilt: ti;iiii.riii),
temperature, fast switching speed and improved 'R8rcc' N, e 'refs'
repetitiveavalancherating.Thesefeaturescombine N g l l,
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications. TO-220AB D2Pak TO-262
IRLZ44ZPbF IRLZ44ZSPbF IRL244ZLPbF
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 51
ID @ To = 100°C Continuous Drain Current, Vss @ 10V 36 A
'DM Pulsed Drain Current (1) 204
PD @TC = 25°C Power Dissipation 80 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage t 16 V
EAS(Thermally limited) blngIe Pulse Avalanche EnergyQ0 78 m J
EAS (Tested ) Single Pulse Avalanche Energy Tested Value L6) 110
IAR Avalanche Current LO See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy co m J
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range I
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw © 10 Ibfoin (1 .1N°m)
Thermal Resistance
Parameter Typ. Max. Units
Roc Junction-to-Case © - 1.87 °C/W
Recs Case-to-Sink, Flat Greased Surface © 0.50 -
ReJA Junction-to-Ambient C) - 62
ReJA Junction-to-Ambient (PCB Mount) - 4O
1
10/01/10
|RLZ44Z/S/LPbF
International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 -- -- V Ves = 0V, ID = 250PA
AV(BFI)DSS/ATJ Breakdown Voltage Temp. Coefficient -- 0.05 -- V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - 11 13.5 mg Vss = 10v, ID = 31A ©
- - 20 mo Vss = 5.0V, ID = 30A ©
- - 22.5 mn Vss=4.5V, ID: 15A OD
Vesuh) Gate Threshold Voltage 1.0 - 3.0 V l/rss = Vss, ID = 250pA
gfs Forward Transconductance 27 - - V l/rs = 25V, ID = 31A
loss Drain-to-Source Leakage Current - - 20 HA l/ns = 55V, Vss = 0V
- - 250 l/ns = 55V, Vss = OV, T J = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vas = 16V
Gate-to-Source Reverse Leakage - - -2OO Vas = -16V
A Total Gate Charge - 24 36 ID = 31A
As Gate-to-Source Charge - 7.5 - nC VDS = 44V
di Gate-to-Drain ("Miller") Charge - 12 - Vas = 5.0V ©
td(on) Turn-On Delay Time - 14 - VDD = 50V
t, Rise Time - 160 - ID = 31A
td(off) Turn-Off Delay Time - 25 - ns Rs = 7.5 Q
t, Fall Time - 42 - Vss = 5.0V OD
Lo Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 1620 - Vss = 0V
Coss Output Capacitance - 230 - Vos = 25V
Crss Reverse Transfer Capacitance - 130 - pF f = 1.0MHz
Coss Output Capacitance -- 860 -- Vss = OV, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance -- 180 -- Vss = OV, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance -- 280 -- Vss = 0V, Vos = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 51 MOSFET symbol D
(Body Diode) A showing the iii/l")-
ISM Pulsed Source Current -- -- 204 integral reverse a E
(Body Diode) C) p-n junction diode. V:
VSD Diode Forward Voltage -- -- 1.3 V TJ = 25°C, ls = 31 A, l/tas = 0V oo
tr, Reverse Recovery Time -- 21 32 ns TJ = 25°C, IF = 31A, VDD = 28V
Qrr Reverse Recovery Charge -- 16 24 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
