IRLZ44ZS ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLZ44ZSTRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRLZ44ZPbFIRLZ44ZSPbF IRLZ44ZLPbFAbsolute Maximum RatingsParameter Max. UnitsContinuou ..
IRM-2638 , Infrared Remote-control Receiver Module
IRM-2638 , Infrared Remote-control Receiver Module
IRM-2638 , Infrared Remote-control Receiver Module
IRM-2638A , Infrared Remote-control Receiver Module
ISPLSI2096E-135LT128 , In-System Programmable SuperFAST™ High Density PLD
ISPLSI2096VE-135LT128I , 3.3V In-System Programmable SuperFAST™ High Density PLD
ISPLSI2128-100LQ , In-System Programable High Density PLD
ISPLSI2128V-60LT100 , 3.3V High Density Programmable Logic
ISPLSI2128V-60LT100 , 3.3V High Density Programmable Logic
ISPLSI2128V-80LT100 , 3.3V High Density Programmable Logic
IRLZ44ZS
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
. I PD - 95849
Internati(ona
.3 R ifi AUTOMOTIVE MOSFET IRLZ44Z
TOR ech Ier IRLZ44ZS
IRLZ44ZL
Features HEXFET© Power MOSFET
. Logic Level
o Advanced Process Technology D
q Ultra Low On-Resistance VDSS = 55V
. 175°C Operating Temperature
. Fast Switching " r, RDS(on) = 13.5mQ
o Repetitive Avalanche Allowed up to Tjmax G
Description ID = 51A
Specifically designed for Automotive applications, s
this HEXFET© Power MOSFET utilizes the latest
processing techniques to achieve extremelylowon-
resistance per silicon area. Additional features of ', Fs
this design area175°Cjunctionoperatingtempera- ii,iii,iiish
ture, fast switching speed and improved repetitive ‘\ T _
avalanche rating . These features combine to make ' .'
this design an extremely efrlcientand reliable device
for use in Automotive applications and a wide variety TO-220AB D2Pak TO-262
of other applications. IRLZ44Z IRLZ44ZS IRLZ44ZL
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 51
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 36 A
IDM Pulsed Drain current Ll.) 204
PD @Tc = 25°C Power Dissipation 80 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage * 16 V
EAS (Thermally limited) blngle Pulse Avalanche tznergy00 78 mJ
E AS (Tested ) binglerHulse Avalanche-energy-rested-value (di) 1 10
IAR Avalanche current 0) See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche tnergy L5) m J
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw © 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Roc Junction-to-Case © - 1.87 °C/W
Rocs Case-to-Sink, Flat Greased Surface ©© 0.50 -
ROJA Junction-to-Ambient ©© - 62
ROJA Junction-to-Ambient (PCB Mount) (8)0) - 40
1
3/2/04
IRLZ44Z/ S/ L
International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRmss Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.05 - V/“C Reference to 25°C, ID = 1mA
RDS(0n) Static Drain-to-Source On-Resistance - 11 13.5 mg VGS = 10V, ID = 31A ©
- - 20 mn VGS = 5.0V, ID = 30A ©
- - 22.5 mg Vss = 4.5V, ID = 15A ©
Vesoh) Gate Threshold Voltage 1.0 - 3.0 V Vros = VGS, ID = 250pA
gfs Forward Transconductance 27 - - V VDS = 25V, ID = 31A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 55V, Vss = 0V
- - 250 I/os = 55V, Vss = 0V, T., = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 16V
Gate-to-Source Reverse Leakage - - -200 I/ss = -16V
Q, Total Gate Charge - 24 36 ID = 31A
As Gate-to-Source Charge - 7.5 - nC Ws = 44V
di Gate-to-Drain ("Miller") Charge - 12 - VGS = 5.0V s
tum) Turn-On Delay Time - 14 - VDD = 50V
t, Rise Time - 160 - ID = 31A
tum) Turn-Off Delay Time - 25 - ns RG = 7.5 Q
t, Fall Time - 42 _- l/GS = 5.0V s
Lo Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 1620 - VGS = 0V
Coss Output Capacitance - 230 - Vos = 25V
Crss Reverse Transfer Capacitance - 130 - pF f = 1.0MHz
Coss Output Capacitance - 860 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 180 - VGS = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 280 - VGS = 0V, Vos = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 51 MOSFET symbol D
(Body Diode) A §howmg the 1r,t-
ISM Pulsed Source Current - - 204 integral reverse a E
(Body Diode) T p-n junction diode. a
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 31A, VGS = 0V ©
trr Reverse Recovery Time - 21 32 ns TJ = 25°C, IF = 31A, Vor, = 28V
Qrr Reverse Recovery Charge - 16 24 nC di/dt = 100Alps s
ton FonNard Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
