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IRLZ44N-IRLZ44NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
Titat, Rectifier
PD - 9.13468
IRLZ44N
HEXFET® Power MOSFET
o Logic-Level Gate Drive
0 Advanced Process Technology D
o Dynamic dv/dt Rating VDSS = 55V
o 175°C Operating Temperature _
o Fast Switching H- A RDS(on) = 0.0229
0 Fully Avalanche Rated
ID = 47A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized (si/jd),),,,,,":.'."...;.:.,.-:.
device design that HEXFET Power MOSFETs are well 's)::),,
known for, provides the designer with an extremely efficient 'il):firi,-ri-)ii-''i-'ii)i)
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commerciaI-industrial applications at power dissipation
levels to approximately 50 watts. The Iowthermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, I/ss @ 10V 47
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 33 A
IDM Pulsed Drain Current co 160
PD @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
I/ss Gate-to-Source Voltage :16 V
EAS Single Pulse Avalanche Energy © 210 mJ
IAR Avalanche Current© 25 A
EAR Repetitive Avalanche EnergyCD 11 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - - 1.4
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - 'C/W
Ram Junction-to-Ambient - - 62
8/25/97
IRLZ44N
International
IQB. Rectifie_r
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.070 - V/°C Reference to 25°C, ID = 1mA
--.- --.- 0.022 VGS = 10V, ID = 25A co
Rosm Static Drain-to-Source On-Resistance - - 0.025 Q VGs = 5.0V, ID = 25A co
- - 0.035 VGs = 4.0V, ID = 21A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V VDS = l/ss, ID = 250pA
gts Forward Transconductance 21 - - S VDS = 25V, ID = 25A
bss Drain-to-Source Leakage Current : T, Ji, PA [tt J.. ix x: J.. t, TJ = 150°C
I Gate-to-Source Forward Leakage - - 100 nA VGS = 16V
GSS Gate-to-Source Reverse Leakage - - -100 I/ss = -16V
Qg Total Gate Charge - - 48 ID = 25A
095 Gate-to-Source Charge - - 8.6 nC VDs = 44V
di Gate-to-Drain ("Miller") Charge - - 25 VGs = 5.0V, See Fig. 6 and 13 @
tdmn) Turn-On Delay Time - 11 - VDD = 28V
tr Rise Time - 84 - ns ID = 25A
td(off) Turn-Off Delay Time - 26 - Rs = 3.4n, VGS = 5.0V
tf Fall Time 15 RD = 1.19, See Fig. 10 ©
. Between lead, D
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
Ls Internal Source Inductance - 7.5 - from package . G
and center of die contact s
Ciss Input Capacitance - 1700 - VGS = 0V
Cogs Output Capacitance - 400 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is . Continuous Source Current - - 47 MOSFET symbol D
(Body Diode) A showmg the L-u--,
ISM _ Pulsed Source Current - - 160 integral reverse G (tLl
(Body Diode) co p-n Junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 25A, I/ss = ov 69
tn Reverse Recovery Time - 80 120 ns To = 25°C, IF = 25A
G, Reverse RecoveryCharge - 210 320 nC di/dt = 100A/ps ©
ton Fon/vard Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting T J = 25°C, L = 470pH
Rs = 259, IAS = 25A. (See Figure 12)
© ISD S 25A, di/dt S 270/Ups, VDD S V(BR)ross,
TJ S 175°C
GD Pulse width f 300ps; duty cycle f 2%.
