IRLZ44 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
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ISPLSI2064VE-135LT100 , 3.3V In-System Programmable High Density SuperFAST™ PLD
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IRLZ44
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
"ntennatikynal
TOR Rectifier
HEXFET® Power MOSFET
Dynamic dv/dt Rating
Logic-Level Gate Drive
RDs(on) Specified at VGs=4V & 5V
175°C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-eo package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
PD-9.5590
lRLii514
D Voss = 60V
RDS(0n) "a'''',' 0.0289
s ID = 50*A
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, I/ss @ 5.0 V 50*
ID @ To = 100°C Continuous Drain Current, Vas @ 5.0 V 36 A
IDM Pulsed Drain Current co 200
Po @ Tc = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 WPC
VGS Gate-to-Source Voltage $10 _ V
EAs Single Pulse Avalanche Energy © 400 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
TJ Operating Junction and ..55 to +175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rmc Junction-to-Case - '---t 1.0
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - “C/W
Flax Junction-to-Ambient - - 62
1FILZ44 _ 1:212
Electrical Characteristics tii) Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. l: Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - F - V VGs=0V, lo: 2500A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient -.. 0.070 - V/°C Reference to 25°C, ID: 1mA
RDS(0n) Static Drain-to-Source On-Resistance - - 0.028 f2 N/ss-HMV, |D=31A (g)
, - - 0.039 VGS=4.0V, b--.25A ©
VGS(lh) Gate Threshold Voltage 1.0 - 2.0 V VDs=VGs. lo: 25OWA
gys Forward Transconductance 23 - - S VDs=25V, ID=31A ©
loss Drain-to-Source Leakage Current - - 25 pA VDS=60V’ Vas-HN
H - 250 Vos=48V, Ves=OV, TJ=1SOOC
lass Gate-to-Source Forward Leakage - - 100 n A VGs=10V
Gate-to-Source Reverse Leakage ..r.re-r- - -100 VGs=-1OV
ch Total Gate Charge - - 66 b=-51A
Qgs Gate-to-Source Charge - - 12 I VDS=48V
di Gate-to-Drain ("Miller") Charge - - 43 Ves=5.0V See Fig, 6 and 13 ©
tdmn) Turn-On Delay Time -- 17 - , VDD=30V
tr Rise Time - 230 - ns b=51 A
tam”) Turn-Off Delay Time - F 42 - Re=4.69
I: Fall Time - 110 - HD=0.569 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - tt,itCJ.li)fe.') D
nH from package GE
Ls Internal Source Inductance - 7.5 - Ind Center of
die contact 3
cu, Input Capacitance w 3300 - VGS=0V
Cogs Output Capacitance - 1200 - pF VDs=25V
Crss Reverse Transfer Capacitance - 200 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 50* MOSFET symbol D
(Body Diode) A _ showing the L-nc-il:
ISM Pulsed Source Current _ - 200 integral reverse G (trl
, (Body Diode) (CO p-n junction diode. s
, Vso Diode Forward Voltage ' - - 2.5 V TJ=25DC, |s=51A, l/ss-MY/ ©
trr Reverse Recovery Time - 130 180 ns TJ=250C, IF--51A
Clrr Reverse Recovery Charge - 0.84 1.3 “C di/dt=1OOA/us ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls-rl-o)
Notes:
(JO Repetitive rating; pulse width limited by C3) ISDSS1A, di/dtsi250/Upis, VDDSV(BR)Dss,
max. junction temperature (See Figure 11) TJS175°C
C2) VDD=25V, starting TJ=25°C, L=179PH @ Pulse width s: 300 us; duty cycle 32%.
RG--25n, lAs=51A (See Figure 12)
* Current limited by the package, (Die Current =51A)
