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IRLZ34NS from IR,International Rectifier

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IRLZ34NS

Manufacturer: IR

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRLZ34NS IR 300 In Stock

Description and Introduction

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRLZ34NS is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
International Rectifier (IR)  

### **Part Number:**  
IRLZ34NS  

### **Description:**  
The IRLZ34NS is an N-channel HEXFET Power MOSFET designed for high-efficiency switching applications. It is optimized for low gate drive power and fast switching performance.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 55V  
- **Continuous Drain Current (ID):** 30A (at 25°C)  
- **Pulsed Drain Current (IDM):** 120A  
- **RDS(on) (Max):** 35mΩ (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 48W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-220AB  

### **Features:**  
- Advanced Process Technology  
- Low On-Resistance  
- Fast Switching Speed  
- High Current Handling Capability  
- Improved dv/dt Capability  
- 100% Avalanche Tested  
- Lead-Free and RoHS Compliant  

This information is based on the manufacturer's datasheet and technical documentation.

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