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IRLZ34N-IRLZ34NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International PD-9.1307B
TOR, Rectifier IRLZ34N
HEXFET® Power MOSFET
o Logic-Level Gate Drive
0 Advanced Process Technology D
o Dynamic dv/dt Rating VDSS = 55V
o 175°C Operating Temperature _
o Fast Switching G H- A RDS(on) = 0.0359
0 Fully Avalanche Rated
ID = 30A
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well tsij(i)l._,,-1,i,s,.
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications. tl)i, /rr''s'''''s''i'"s'
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The Iowthermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide ' - - -
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25''C Continuous Drain Current, VGS @ 10V 30
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 21 A
IDM Pulsed Drain Current C) 110
PD @Tc = 25°C Power Dissipation 68 IN
Linear Derating Factor 0.45 W/°C
I/ss Gate-to-Source Voltage :16 V
EAs Single Pulse Avalanche Energy © 110 ml
IAR Avalanche Current© 16 A
EAR Repetitive Avalanche Energy(0 6.8 nt)
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case - - 2.2
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - ''ClW
Rua Junction-to-Ambient - - 62
8/25/97
IRLZ34N
International
TOR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.065 - V/°C Reference to 25°C, ID = 1mA
--.- --.- 0.035 VGS =10V,ID = 16A co
RDSM Static Drain-to-Source On-Resistance - - 0.046 Q VGs = 5.0V, ID = 16A co
- - 0.060 VGs = 4.0V, ID = 14A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V VDS = l/ss, ID = 250pA
gts Forward Transconductance 11 - - S VDS = 25V, ID = 16A
loss Drain-to-Source Leakage Current : T, Ji, PA [tt J.. ig,' V: J.. t, TJ = 150°C
I Gate-to-Source Forward Leakage - - 100 nA VGS = 16V
GSS Gate-to-Source Reverse Leakage - - -100 I/ss = -16V
Qg Total Gate Charge - - 25 ID = 16A
095 Gate-to-Source Charge - - 5.2 nC VDs = 44V
di Gate-to-Drain ("Miller") Charge - - 14 VGs = 5.0V, See Fig. 6 and 13 @
tdmn) Turn-On Delay Time - 8.9 - VDD = 28V
tr Rise Time - 100 - ns ID = 16A
td(off) Turn-Off Delay Time - 21 - RG = 6.5n, VGS = 5.0V
tf Fall Time 29 RD = 1.89, See Fig. 10 ©
. Between lead, D
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
Ls Internal Source Inductance - 7.5 - from package . G
and center of die contact s
Ciss Input Capacitance - 880 - VGS = 0V
Cogs Output Capacitance - 220 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 94 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 30 MOSFET symbol D
(Body Diode) A showmg the Lt
.IS'V' Pulsed Source Current - - 1 10 integral reverse G (tLl
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 16A, VGS = 0V G)
tn Reverse Recovery Time - 76 110 ns TJ = 25°C, IF = 16A
er Reverse RecoveryCharge - 190 290 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 610pH
Rs = 259, IAS = 16A. (See Figure 12)
© ISD S 16A, di/dt f 270A/ps, VDD f V(BR)DSS,
TJ f 175°C
GD Pulse width 3 300ps; duty cycle 5 2%.
