IRLZ34 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageIntematiqnal
TOR Rectifier
PD-9.558C
|RL234
HEXFET® Power MOSFET
q Dynamic dv/dt Ratin ..
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IRLZ34-IRLZ34PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International PD-9.558C
EOR Rectifier TI L2 3 4
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 Logic-Level Gate Drive
0 RDs(on) Specified at Ves=4V & 5V
0 175°C Operating Temperature
0 Fast Switching
VDSS = 60V
RDS(on) L.= 0.050Q
Ease of Paralleling
Simple Drive Requirements
ID = 30A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness,
The TO-22O package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter ' Max. . Units
10 @ Tc = 25°C Continuous Drain Current, Ves © 5.0 V 30
lo © Tc = 100°C Continuous Drain Current, I/cas © 5.0 V 21 A
IDM Pulsed Drain Current C) 110
Po © Tc 'i.Td 25°C Power Dissipation 88 W
Linear Derating Factor 0.59 W/°C
Ves Gate-to-Source Voltage :10 V
EAS Single Pulse Avalanche Energy 2 220 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
To Operating Junction and ~55 to +175
Tsro Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 Nam)
Thermal Resistance
Parameter Min. Typ. _ Max. Units
Reno Junction-to-Case - - 1 .7
Recs Case-to-Sink, Flat, Greased Surfatyy - 0.50 - °C/W
ReJA Junction-to-Ambient - - 62
5' =85
I RLZ34
Electrical Characteristics (g) TJ = 25°C (unless otherwise specified)'
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS i Drain-to-Source Breakdown Voltage 60 -- - V VGS=0V, ID: 250pA
AV(BR)Dss/ATJ| Breakdown Voltage Temp. Coefficient - 0.070 - V/°C Reference to 25°C, ID: 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.050 Q I/ss-HHN, ID=18A Es)
- - 0.070 VGs=4.0V, 10:15A Co)
Vesgh) Gate Threshold Voltage 1 .0 - 2.0 V V08=VGS. ID: 250PA
gfs § Forward Transconductance 12 - - S Vos=25v, ID=18A Ci)
loss i Drain-to-Source Leakage Current - - 25 WA Vos=60V, Vas=0V
I - - 250 Vos=48V, VGs=0V, TJ=1SODC
less Gate-to-Source Forward Leakage --.- - 100 n A VGs=1OV
Gate-to-Source Reverse Leakage - - -100 VGs=-10V
q, Total Gate Charge - - 35 b=30A
Qgs Gate-to-Source Charge w - 7.1 nC Vos=48V
di Gate-to-Drain ("Miller") Charge - - 25 VGs=5.0V See Fig. 6 and 13 @
td(on) Turn-On Delay Time - 14 - VDD=30V
tr Rise Time - 170 - ns lir--30A
td(ofi) Turn-Off Delay Time - 30 - RG=6.0§2
t: Fall Time - 56 - RD=1.0.Q See Figure 10 C4)
Lo Internal Drain Inductance - 4.5 - t2ir(if.lti1nd.') tfr-' D
nH from package GAL] )
Ls Internal Source Inductance - 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 1600 - VGS=OV
Coss Output Capacitance - 660 - pF VDs=25V
Crss , Reverse Transfer Capacitance -- 170 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ, Max. Units Test Conditions
Is Continuous Source Current W - 3O MOSFET symbol D
(Body Diode) A showing the L-i-:
ISM Pulsed Source Current - - 1 10 integral reverse G (lo-l'
(Body Diode) (I) p-n junction diode. s
VSD Diode Forward Voltage - - 1.6 V TJZZSOC, Is=30A, VGs=0V ©
tn Reverse Recovery Time - 120 180 ns TJ=25°C, IF=30A
er Reverse Recovery Charge - 0.70 1.3 “C di/dt=100A/ws (io
ton Forward Turn-On Time Intrinsic turn-on time is neg1egible (turn-on is dominated by LSH-LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=285WH
RG--25n, IAs=30A (See Figure 12)
(3) ISDS3OA, di/de200A/ps, VDDSV(BR)Dss,
TJS175°C
© Pulse width f 300 us; duty cycle 32%.
