IRLZ24STRR ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD-9.904
International
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IRLZ24S-IRLZ24STRL-IRLZ24STRR
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD-9.904
mtternatitmall
IOR Rectifier . _ IRLZ24S
HEXFET® Power MOSFET
o Surface Mount
Available in Tape & Reel D -
Dynamic dv/dt Rating VDSS - 60V
Logic-Level Gate Drive
RDS(on) Specified at ves=4v & 5V L,' A RDS(on) = 0.109
175°C Operating Temperature
Fast Switching s In = 17A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
F Parameter ---__t-_" __2_ Max. Units"
io @ Tc = 25°C Continuous Drain Current, Vss a 5.0 V 17
ID © Tc = 100°C Continuous DiinCurrent, VGs © 5.0 V 12 A
IDM Pulsed Drain Current C) 68
F; © Tc = 25°C Power Dissipation 60 w
Po @ TA = 25°C Power Dissipation (PCB Mount)" 3.7
Linear Derating Factor 0.40 W PC
Linear Derating Factor (PCB Mount)" 0.025
Ves Gate-to-Source Voltage :10 V
EAs Single Pulse Avalanche Energy (2) 110 mJ
dv/dl - Peak Diode Recovery dv/dt CQ) 4.5 V/ns
EEG}- Junction and Storage Temperature Range -55to +175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case) I
Thermal Resistance
Parameter - Min. Typ. Max. Units
Rm Junction-to-Case - - 2.5
Rem Junction-to-Ambient (PCB mount)" - - 4O °C/W
Ram Junction-to-Ambient -ts_.__C'.''r" - 62
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRLZ24S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGs=OV, 10: 2500A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.060 - V/°C Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance M - 0.10 Q I/ss-HHN, Io=10A ©
- - 0.14 VGs=4.0V, b=8.5A co
VGS(lh) Gate Threshold Voltage 1.0 - 2.0 V VDs=VGs, ID: 250uA
gts Forward Transconductance 7.3 - - S 1hos=25V, ID=1OA ©
loss Drain-to-Source Leakage Current - - 25 pA VDs=60V, I/es-HN
- - 250 VDs=48V, VGs=OV, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss=10V
Gate-to-Source Reverse Leakage M - -100 VGs=-10V
Qg Total Gate Charge - - 18 ko--17A
Qgs Gate-to-Source Charge - - 4.5 nC VDs=48V
di Gate-to-Drain ("Miller") Charge - - 12 VG3=5.OV See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 11 -.- VDD=30V
tr Rise Time - 110 - ns kr--17A
td(oti) Turn-Off Delay Time - 23 - 962909
If Fall Time - 41 - RD=1.7Q See Figure 10 (4)
la: Internal Drain Inductance - 4.5 - tti,'tt"('on.lt//ii.') D
nH from package eg: )
Ls Internal Source Inductance - 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 870 '-r-.. Var-OV
Cass Output Capacitance - 360 - pF Vrss--25V
Crss Reverse Transfer Capacitance - 53 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the b-,-,-:
lsM Pulsed Source Current - -_. 68 integral reverse G :L
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V TJ=25°C, Is=17A, 1/ss=0V co
tn Reverse Recovery Time - 110 260 ns TJ=2SOC, IF=17A
G, Reverse Recovery Charge - 0.49 1.5 no di/dt=100A/ps ©
ton FonNard Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD) l
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=444WH
RG=25§2, |As=17A (See Figure 12)
TJS175°C
(j) 130$17A, di/de140A/ps, VDDSV(BR)DSS,
(ii) Pulse width f 300 ps; duty cycle C2%.
