IRLZ24NS ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLZ24S ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRLZ24STRL ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRLZ24STRR ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD-9.904
International
TOR Rectifier IRLZ24S
HEXFET® Power MOSFET
. Surface Mount
. Av ..
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TOR Rectifier
PD-9.558C
|RL234
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q Dynamic dv/dt Ratin ..
IRLZ34N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermal resistanceTO-22 ..
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ISPLSI2064VE-135LT100 , 3.3V In-System Programmable High Density SuperFAST™ PLD
IRLZ24NS
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
PD - 91358E
IFCZ24NS/L
Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRLZ24NS)
Low-profile through-hole (IRLZ24NL)
175°C Operating Temperature
Fast Switching
0 Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewell known for, provides the designerwith an extremely
emcient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
HEXFET0 Power MOSFET
VDSS = 55V
RDS(on) = 0.069
|D=18A
D2Pak is suitable for high current applications because of D 2 Pak T0462
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ24N L) is available for low-
profileapplications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V© 18
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10VS 13 A
IDM Pulsed Drain Current cos 72
PD @TA = 25°C Power Dissipation 3.8 W
Pro @To = 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/''C
Ves Gate-to-Source Voltage $16 V
EN; Single Pulse Avalanche EnergyOS 68 m]
IAR Avalanche Current0) 11 A
EAR Repetitive Avalanche Energy0) 4.5 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 3.3 o
ReJA Junction-to-Ambient ( PCB Mounted/steady-state)" - 40 C/W
5/12/98
IRLZ24NS/L International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.061 - V/°C Reference to 25°C, ID = 1mA©
- - 0.060 VGS =1OV,ID =11A©
RDS(on) Static Drain-to-Source On-Resistance - - 0.075 Q Vss = 5.0V, ID = 11A ©
- - 0.105 Vss = 4.0V, ID = 9.0A ©
VGSith) Gate Threshold Voltage 1.0 - 2.0 V VDs = VGs, lo = 250pA
gfs Forward Transconductance 8.3 - - S Vos = 25V, ID = 11AS
. - - 25 Vos = 55V, VGS = 0V
loss Drain-to-Source Leakage Current - - 250 HA Vos = 44V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
q, Total Gate Charge - - 15 ID = 11A
Qgs Gate-to-Source Charge - - 3.7 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - - 8.5 VGS = 5.0V, See Fig. 6 and 13 ©©
td(on) Turn-On Delay Time - 7.1 - VOD = 28V
tr RiseTime - 74 - ns ID = 11A
tam) Turn-Off Delay Time - 20 - Rs = 12n, VGS = 5.0V
tr FallTime 29 RD = 2.49, See Fig. 10 @©
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 480 - VGS = 0V
Cogs Output Capacitance - 130 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 61 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 18 MOSFETsymbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 72 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 11A, VGs = 0V ©
trr Reverse Recovery Time - 60 90 ns TJ = 25°C, IF = 11A
Qrr Reverse Recovery Charge - 130 200 nC di/dt = 100A/ps (96)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+Lo)
Notes:
C) Repetitive rating; pulse width limited by G) Iso s: 11A, di/dt s 290A/ps, l/DD s V(BR)DSS,
max. junction temperature. ( See ftg. 11 ) TJS 175°C
© VDD = 25V, starting TJ = 25°C, L = 790pH © Pulse width I 300ps; duty cycle f 2%.
RG = 25n, IAS = 11A. (See Figure 12)
© Uses IRLZ24N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-IO Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
