IRLZ24 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagelntemational
1:212 Rectifier
PD-9.557C
lRLZ24
HEXFET® Power MOSFET
q Dynamic dv/dt R ..
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IRLZ24
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
EOR Rectifier
HEXFET6 Power MOSFET
o Dynamic dv/dt Rating
0 Logic-Level Gate Drive
o RDs(on) Specified at VGs=4V & 5V
175°C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.557C
llRLZ24
D Voss = 60V
RDS(on) = 0.10Q
s ID = 17A
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-220AB
Parameter Max. Units
ks © Tc = 25°C Continuous Drain Current, I/ss © 5.0 V 17
lo @ Tc = 100°C Continuous Drain Current, veg © 5.0 V 12 A
Irv, Pulsed Drain Current C) 68
Pp @ Tc = 25°C Power Dissipation 60 W
Linear Derating Factor 0.40 WPC '
Vas Gate-to-Source Voltage :10 V '
EAS Single Pulse Avalanche Energy © 110 mJ
dv/dt Peak Diode Recovery dv/dt (E) 4.5 V/ns
Tu Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbt-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rmc Junction-to-Case - - 2.5
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Ram Junction-to-Am bient - - 62
Electrical Characteristics tii) TJ = 25°C (unless othgrwise specified)
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
(2) VDD=25V, starting TJ2250C, L=444HH
RG=25.Q, lAs=17A (See Figure 12)
Parameter Min, Typ. Max, Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VG5=OV, ID: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.060 - V/°C Reference to 25°C, ID: 1mA
RDS(on) Static Drain-to-Source On-Resistance w - 0.10 n Var-iN, k)=IOA ©
- - 0.14 VGS=4.0V, ID=8.5A CO
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V VDs=VGs, ID: 25OWA
ggs Forward Transconductance 7.3 - - S Vos=n25V, ln=10A ©
loss Drain-to-Source Leakage Current - - 25 WA VDS=60V' Vss=0V
-, - - - _ ' - - - - 250 VDs=48V, Ves:OV, TJ~=15000
-'L'd" - - "di/td-id-go-u-L/id/ali" Leakage - - 100 n A VGs=1OV -
Gate-to-Source Reverse Leakage - - -100 l/ss--)
q, Total Gate Charge - - 18 10:17A
Qgs Gate-to-Source Charge .-.- --. 4.5 i " VDS=48V
di Gate-to-Drain ("Miller") Charge - - 12 VGs=5.0V See Fid, 6 and 13 ©
td(on) Turn-On Delay Time - 11 - Var--30V
tr Rise Time - 110 - ns ID=17A
tdwm Turn-Off Del1sfri_re_, 'r- - _>__ - 2’3___ c, RG=9.OQ
t1 Fall Time - 41 - RD=1.7Q See Figure 10 Ci)
Ln Internal Drain Inductance - 4.5 1 - i'hter.lerf,') -s, C)
nH from package sir--)"-,'-' )
1 Ls Internal Source Inductance - 7.5 - and center of
die contact S
Ciss Input Capacitance - 870 - Vss=OV
07055 Output Capacitance - - 360 - PF VDs=25V
cm; __ - "iil'Lci"i%riisiJ/SVxrc''iGiL'r' - - 53 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
- - _ - ___ Parameter Min. Typ. Max. Units Test Conditions
Is - H _ - Eontinuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the '7:
ISM Pulsed Source Current - - 68 integral reverse G (C,
__-_-F--- - (Body Di_c>_d§2_@________ p-n junction diode. s
Vso Diode Forward Voltage - - 13m _)(, TJ=2SOC, 15:17A, Vss=0V CO
t, Reverse Recovery Time - 110 260 ns W TJ=250C, 1F=17A
er Reverse Recovery Charge ; - _0.49 _ 1.5 00 di/dt=100A/ps (4)
ton Forward Turn-On Time _ md/lic' t_u_rn-on time is neglegible (turryt1 is dominated by Ls-rl-rs)
Notes:
C3) ISDS17A, di/deM40A/rts, VDDSV(BR)DSS,
TJS175°C
sq.) Pulse width 3 300 [IS; duty cycle 32%.
