IRLZ14L ,Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)applications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLZ14S ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRLZ14L
Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
PD - 9.903A
International
TOR, Rectifier IRLiiiyl 4S/ L
HEXFET© Power MOSFET
o Advanced Process Technology D
o Surface Mount (IRLZ14S) VDSS = 60V
o Low-profile through-hole (IRLZ14L)
o 175°C Operating Temperature ai" Rrosom = 0.209
o Fast Switching G
ID = 10A
Description S
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on- szak T0-262
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ14L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10VS 10
ID @ Tc = 100°C Continuous Drain Current, I/ss @ 10V© 7.2 A
IDM Pulsed Drain Current C)6) 40
Pro @TA = 25°C Power Dissipation 3.7 W
PD @Tc = 25°C Power Dissipation 43 W
Linear Derating Factor 0.29 W/°C
VGS Gate-to-Source Voltage i 10 V
EAs Single Pulse Avalanche Energy©6) 68 mJ
dv/dt Peak Diode Recovery dv/dt ss 4.5 V/ns
Tu Operating Junction and -55 to + 175 "C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rau, Junction-to-Case - 3.5 o
Ram Junction-to-Ambient ( PCB Mounted/steady-state)" - 40 C/W
8/25/97
IRL2y14S/L
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250pA
AV
_ . _ - - 0.2 l/GS = 5.0V, ID = 6.0A ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.28 Q VGS = 4.0V, ID = 5.0 A ©
Vesah) Gate Threshold Voltage 1.0 - 2.0 V Vos = VGs, ID = 250pA
gfs Forward Transconductance 3.5 - - S Vos = 25V, ID = 6.0AS
. - - 25 Ws = 60V, VGS = 0V
loss Drain-to-Source Leakage Current - - 250 HA VDS = 48V, I/ss = 0V, Tu = 150°C
Gate-to-Source Forward Leakage - - 100 VGs = 10V
IGSS Gate-to-Source Reverse Leakage - - -100 nA N/ss = -10V
Qg Total Gate Charge - - 8.4 ID = 10A
Qgs Gate-to-Source Charge - - 3.5 nC I/os = 48V
di Gate-to-Drain ("Miller") Charge - - 6.0 VGS = 5.0V, See Fig. 6 and 13 q)6)
tam) Turn-On Delay Time - 9.3 - VDD = 30V
tr Rise Time - 110 - ID = 10A
td(off) Turn-Off Delay Time - 17 - Rs = 129
tf Fall Time - 26 - RD = 2.89, See Fig. 10 (ii)6)
Ls Internal Source Inductance - 7.5 - nH Between lead,
and center of die contact
Ciss Input Capacitance - 400 - VGs = 0V
Cogs Output Capacitance - 170 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 42 - f = 1.0MHz, See Fig. 5S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 10 A showing the [-,
ISM Pulsed Source Current integral reverse G Ex
(Body Diode) C) - - 40 p-n junction diode. S
VSD Diode Forward Voltage - - 1.6 V To = 25°C, Is = 10A, VGS = ov co
trr Reverse Recovery Time - 93 130 ns To = 25°C, IF = 10A
er Reverse Recovery Charge - 340 650 nC di/dt = 100A/ps cos
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 790pH
Rs = 259, IAS = 10A. (See Figure 12)
© lso f 10A, di/dt s 90/Ups, VDD f V(BR)DSS,
TJs175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
© Pulse width s: 300ps; duty cycle 3 2%.
G) Uses IRLZ14 data and test conditions
For recommended footprint and soldering techniques refer to application note #AN-994.
