IRLW510A ,Power MOSFETFEATURESBV = 100 VDSS♦ Avalanche Rugged TechnologyR = 0.44ΩDS(on) ♦ Rugged Gate Oxide Te ..
IRLW510ATM ,100V N-Channel Logic Level A-FETFEATURESBV = 100 VDSS♦ Avalanche Rugged TechnologyR = 0.44ΩDS(on) ♦ Rugged Gate Oxide Te ..
IRLW510ATM ,100V N-Channel Logic Level A-FETFEATURESBV = 100 VDSS♦ Avalanche Rugged TechnologyR = 0.44ΩDS(on) ♦ Rugged Gate Oxide Te ..
IRLW610A ,Power MOSFET
IRLW610ATM ,200V N-Channel Logic Level A-FET
IRLW610ATM ,200V N-Channel Logic Level A-FET
ISPLSI2064V-80LT100I , 3.3V High Density Programmable Logic
ISPLSI2064VE , 3.3V In-System Programmable High Density SuperFAST™ PLD
ISPLSI2064VE-100LJ44 , 3.3V In-System Programmable High Density SuperFAST™ PLD
ISPLSI2064VE-100LJ44 , 3.3V In-System Programmable High Density SuperFAST™ PLD
ISPLSI2064VE-100LT44 , 3.3V In-System Programmable High Density SuperFAST™ PLD
ISPLSI2064VE-100LT44 , 3.3V In-System Programmable High Density SuperFAST™ PLD
IRLW510A
Power MOSFET
IRLW/I510A♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ 175°C Operating Temperature
♦ Lower Leakage Current: 10μA (Max.) @ VDS = 100V
♦ Lower RDS(ON): 0.336Ω (Typ.)
$GYDQFHG3RZHU026)(7
Thermal Resistance
FEATURES* When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings©1999
Rev. B
