IRLS3036 ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsDDC Motor DriveV 60VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.1 ..
IRLS4030 ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFETDC Motor DriveDHigh Efficiency Synchronous Rectification in SM ..
IRLS520A ,Power MOSFETFEATURESBV = 100 VDSSn Avalanche Rugged TechnologyR = 0.22ΩDS(on) n Rugged Gate Oxide Techn ..
IRLS640A ,Power MOSFETFEATURESBV = 200 VDSS! Logic-Level Gate DriveR = 0.18 ΩDS(on) ! Avalanche Rugged Technology! R ..
IRLU014 , HEXFET POWER MOSFET
IRLU024N ,55V Single N-Channel HEXFET Power MOSFET in a I-Pak packageapplications. Power dissipation levels up to 1.5 wattsIRLR024N IRLU024Nare possible in typical ..
ISPLSI2064V-60LT100 , 3.3V High Density Programmable Logic
ISPLSI2064V-60LT100 , 3.3V High Density Programmable Logic
ISPLSI2064V-60LT100I , 3.3V High Density Programmable Logic
ISPLSI2064V-60LT44 , 3.3V High Density Programmable Logic
ISPLSI2064V-60LT44I , 3.3V High Density Programmable Logic
ISPLSI2064V-80LT100I , 3.3V High Density Programmable Logic
IRLS3036
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
Tait Rectifier
PD -97358
"RLS3036PbF
IRLSL3036PbF
HEXFETID Power MOSFET
Applications
0 EphMgftg'eDnrgleS nchrono s Rectification in SMPS D Voss 60V
q I I I u I I I I
g. . y y Rom") typ. 1.9mQ
o Uninterruptible Power Supply 2 4 Q
q High Speed Power Switching max. . m
. Hard Switched and High Frequency Circuits Ir, (Silicon Limited) 270ACO
s ID (Package Limited) 195A
Benefits
. Optimized for Logic Level Drive
. Very Low RDS(ON) at 4.5V VGS rx1r1ii)y
. Superior R*Q at 4.5V VGS "Rr'if, 'xii1iir'rri
. Improved Gate, Avalanche and Dynamic dV/dt {I S .. ". 's s
Ruggedness GD GD
o 2ng Characterized Capacitance and Avalanche szak TO-262
I I . IRLS3036PbF IRLSL3036PbF
0 Enhanced body diode dV/dt and dI/dt Capability
o Lead-Free
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
b @ To = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 2700)
ID @ To = 100°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 190CO A
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Package Limited) 195
IDM Pulsed Drain Current © 1100
PD @Tc = 25°C Maximum Power Dissipation 380 W
Linear Derating Factor 2.5 W/°C
Vas Gate-to-Source Voltage :16 V
dv/dt Peak Diode Recovery Ci) 8.0 V/ns
J Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Avalanche Characteristics
EAS (Thermallylimited) Single Pulse Avalanche Energy (3 290 mJ
|AR Avalanche Current © . A
EAR Repetitive Avalanche Energy (0 See Fig. 14, 15, 22a, 22b mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RBJC Junction-to-Case oO) - 0.40 "C/W
ReJA Junction-to-Ambient (PCB Mount, steady state) - 40
1
12/08/08
Downloaded from: http://www.datasheetcata|0_q.com/
IRLS/SL3036PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR,D33 Drain-to-Source Breakdown Voltage 60 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.061 - V/°C Reference to 25°C, ID = 5mA00
RDSM Static Drain-to-Source On-Resistance - 1.9 2.4 mn Vas = lov, ID = 165A ©
- 2.2 2.8 Vss = 4.5V, ID = 140A (9
VGSM Gate Threshold Voltage 1.0 - 2.5 V Vos = l/ss, ID = 250pA
bss Drain-to-Source Leakage Current - - 20 Vos = 60V, l/ss = 0V
- - 250 PA vDS = 60V, Vss = OV, TJ = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 Vss = 16V
Gate-to-Source Reverse Leakage - - -100 nA I/ss = -16V
Rem) Internal Gate Resistance - 2.0 - Q
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min Typ. Max. Units Conditions
gfs Forward Transconductance 340 - - S VDS = 10V, ID = 165A
q, Total Gate Charge - 91 140 ID = 165A
Qgs Gate-to-Source Charge - 31 - l/rss = 30V
di Gate-to-Drain ("Miller") Charge - 51 - nC I/ss = 4.5V s
stnc Total Gate Charge Sync. (Qg - di) - 4O - ID = 165A, VDS =0V, Vas = 4.5V
tum) Turn-On Delay Time - 66 - VDD = 39V
t, Rise Time - 22o - ID = 165A
tdmm Turn-Off Delay Time - 110 - ns Rs = 2.1 f2
t, Fall Time - 110 - Vas = 4.5V ©
Ciss Input Capacitance - 11210 - Vss = 0V
Coss Output Capacitance - 1020 - Vos = 50V
Crss Reverse Transfer Capacitance - 500 - pF f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related)© - 1430 - N/ss = 0V, VDS = 0V to 48V C)
Cass eff. (TR) Effective Output Capacitance (Time Related) © - 1880 - VGS = 0V, Vos = 0V to 48V ©
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 270 MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 1100 integral reverse G
(Body Diode) © p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 165A, Vss = 0V (O
trr Reverse Recovery Time - 62 - TJ = 25°C VR = 51V,
- 66 - ns TJ = 125°C IF =165A
Q,, Reverse Recovery Charge - 310 - T, = 25°C di/dt = 100A/ps s
- 360 - nC Tu = 125°C
IRRM Reverse Recovery Current - 4.4 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting Tu = 25°C, L = 0.021mH
Rs = 259, IAS = 165A, l/ss =10V. Part not recommended for use
above this value .
G) Iso S165A, di/dt S 430A/ps, I/oo f V(BR)DSSI To $17500.
© Pulse width 3 400us; duty cycle S 2%.
Downloaded from: http://www.datasheetcata|o_q.com/
Cass eff. (TR) is a fixed capacitance that gives the same charging time as
Cass while VDs is rising from O to 80% VDSS-
Cass eff. (ER) is a fixed capacitance that gives the same energy as
COSS while Vos is rising from O to 80% Voss.
When mounted on I" square PCB (FR-4 or G-1O Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
Re is measured at Tu approximately 90°C.
Limited by TJmax, see Fig. 14, 15, 22a, 22b for typical repetitive
avalanche performance.
RQJC value shown is at time zero.
