IRLR8743TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High Frequency Synchronous BuckV R maxQgDSS DS(on) Converters for Computer Process ..
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IRLR9343TRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRLR9343TRRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsVDrain-to-Source Voltage -55 VDSVGate-to-S ..
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IRLR8743-IRLR8743TRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
PD - 96123
IRLR8743PbF
IRLU8743PbF
Applications HEXFET© Power MOSFET
o High Frequency Synchronous Buck
Converters for Computer Processor Power Voss Rns(on) max 09
q High Frequency Isolated DC-DC 30V 3.1 mn 39nC
Converters with Synchronous Rectification
for Telecom and Industrial Use D
o Lead-Free _iiiiiit sii,it
Benefits Ri', l, V .
. Very Low RDS(on) at 4.5V vGS l S ' £303
o Ultra-Low Gate Impedance
0 Fully Characterized Avalanche Voltage D-Pak l-Pak
and Current 1RLR8743PbF IRLU8743PbF
Gate Drain Source
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 1 20
ID @ TC = 25°C Continuous Drain Current, l/ss @ 10V 160C9
ID @ To = 100°C Continuous Drain Current, I/ss @ 10V 113© A
IDM Pulsed Drain Current OD 640
PD @TC = 25°C Maximum Power Dissipation s 135 W
PD @T0 = 100°C Maximum Power Dissipation s 68
Linear Derating Factor 0.90 WPC
TJ Operating Junction and -55 to + 175 "C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
Notes OD through S are on page 11
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08/15/07
IRLR/U8743PbF
International
TOR Rectifier
Static © To = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250pA
ABI/ross/AT, Breakdown Voltage Temp. Coefficient - 20 - mV/°C Reference to 25°C, lo = 1mA
RDS
Static Drain-to-Source On-Resistance - 2.4 3.1 Vss = 10V, ID = 25A ©
_-.- 3.0 3.9 mQ Vss = 4.5V, ID = 20A ©
VGS(th) Gate Threshold Voltage 1.35 1.9 2.35 V l/rss = Vss, ID = 100pA
AVesum/ATJ Gate Threshold Voltage Coefficient - -6.4 --.- mV/°C
loss Drain-to-Source Leakage Current - - 1.0 Vos = 24V, l/ss = 0V
- - 150 pA Vos = 24V, Vss = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 Ves = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 89 - - S Vos = 15V, ID = 20A
09 Total Gate Charge - 39 59
Qgs1 Pre-Vth Gate-to-Source Charge - 10 - Vos = 15V
Qgsz Post-Vth Gate-to-Source Charge - 3.9 - nC Vas = 4.5V
Cu, Gate-to-Drain Charge - 13 - ID = 20A
ngdr Gate Charge Overdrive - 12 - See Fig. 16
st Switch Charge (0952 + di) --- 17 .-__
Qoss Output Charge -- 21 -- nC Vos = 16V, l/ss = OV
Re Gate Resistance - 0.85 1.5 Q
tum Turn-On Delay Time - 19 - VDD = 15V, l/ss = 4.5VOD
t, Rise Time - 35 - ns ID = 20A
tdwm Turn-Off Delay Time - 21 - Rs = 1.89
t, Fall Time - 17 - See Fig. 14
Ciss Input Capacitance - 4880 - Vas = 0V
Cass Output Capacitance - 950 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 470 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 250 mJ
'AR Avalanche Current C) - 20 A
EAR Repetitive Avalanche Energy OD - 13.5 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current -- -- MOSFET symbol D
. 1603) . _
(Body Diode) A showing the E
ISM Pulsed Source Current - - 640 integral reverse G E
(Body Diode) CD p-n junction diode. a
VSD Diode Forward Voltage - - 1.0 V To = 25°C, IS = 20A, VGS = 0V ©
trr Reverse Recovery Time - 18 27 ns To = 25°C, IF = 20A, VDD = 15V
er Reverse Recovery Charge - 32 48 nC di/dt = 300A/us ©
tan Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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