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IRLR8729-IRLR8729TRLPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 97352B
_iti"pit,i,(jiiie,l IRLR8729PbF
- sc IRLU8729PbF
Applications HEXFET© Power MOSFET
o High Frequency Synchronous Buck Voss RDS(on) max Qg
Converters for Computer Processor Power
q High Frequency Isolated DC-DC 30V 8.9mS2 10nC
Converters with Synchronous Rectification
for Telecom and Industrial Use 'giiy, 'gb
. 'c." R'se
Benefits Rift' l, _
. Very Low RDS(on) at 4.5V Vas l, S ' 133
o Ultra-Low Gate Impedance G G
0 Fully Characterized Avalanche Voltage D-Pak l-Pak
and Current IRLR8729PbF lfRLU8729PbF
Lead-Free
RoHS compliant G D s
Gate Drain Source
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20
ID © Tc = 25°C Continuous Drain Current, Vas @ 10V 58(9
ID © To = 100°C Continuous Drain Current, Vss @ 10V 41 (D A
IDM Pulsed Drain Current C) 260
Pro @Tc = 25°C Maximum Power Dissipation © 55 W
PD @TC = 100°C Maximum Power Dissipation © 27
Linear Derating Factor 0.37 W/°C
TJ Operating Junction and -55 to + 175 ''C
Tsms Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1 .6mm from case)
Thermal Resistance
Parameter . Max.
Roc Junction-to-Case 2.73
ROJA u -to- ent 50
ROJA Junction-to-Ambient 110
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes co through s are on page 11
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IRLR/U8729PbF
International
IEER Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 21 - mV/°C Reference to 25°C, '0 = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 6.0 8.9 mf2 Vas = 10V, ID = 25A ©
- 8.9 11.9 Vas = 4.5V, ID = 20A ©
VGSom Gate Threshold Voltage 1.35 1.8 2.35 v Vos = Vas, ID = 25pA
AVGSW/ATJ Gate Threshold Voltage Coefficient - -6.2 - mV/°C
IDSS Drain-to-Source Leakage Current -- -- 1.0 VDs = 24V, Ves = 0V
- - 150 pA l/rs = 24V, Vas = OV, T J = 125°C
less Gate-to-Source Forward Leakage -- -- 100 Ves = 20V
Gate-to-Source Reverse Leakage --.- --- -100 Vss = -20V
gfs Forward Transconductance 91 - - S Vos = 15V, ID = 20A
as, Total Gate Charge - 10 16
0951 Pre-Vth Gate-to-Source Charge - 2.1 - Vos = 15V
As Post-Vth Gate-to-Source Charge - 1.3 - nC Vas = 4.5V
di Gate-to-Drain Charge - 4.0 - ID = 20A
ngdr Gate Charge Overdrive - 2.6 - See Fig. 16
st Switch Charge (oss + Che) - 4.8 -
Qoss Output Charge - 6.3 - nC Vrss = 16V, Vss = 0V
Rs Gate Resistance - 1.6 2.7 Q
td(on) Turn-On Delay Time -- 10 -- VDD = 15V, Vss = 4.5VOD
t, Rise Time --.- 47 - lo = 20A
tdmm Turn-Off Delay Time - 11 - ns Rs = 1.89
t, Fall Time - IO - See Fig. 14
Ciss Input Capacitance - 1350 - Vas = 0V
Cass Output Capacitance - 280 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 120 - f = 1 .OMHz
Avalanche Characteristics
Parameter Max.
e Pulse Avalanche En © 74
'AR Avalanche Current (D 20
EAR R titive Avalanche E C) 5.5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - MOSFET symbol D
. 58© . _
(Body Diode) A showing the E
ISM Pulsed Source Current -- -- 260 integral reverse G (rd,
(Body Diode) OD piiunction diode. e
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 20A, VGS = 0V ©
trr Reverse Recovery Time - 16 24 ns TJ = 25°C, IF = 20A, l/oo = 15V
er Reverse Recovery Charge - 19 29 nC di/dt = 300A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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