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IRLR8726-IRLR8726TRLPBF-IRLR8726TRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR. Rectifier
PD - 97146A
IRLR8726PbF
IRLU8726PbF
Applications HEXFET® Power MOSFET
0 High Frequency Synchronous Buck V R
max 0 t .
Converters for Computer Processor Power DSS DS(on) g ( yp )
o High Frequency Isolated DC-DC 30V 5.8mn@Vas = 10V 15nC
Converters with Synchronous Rectification
for Telecom and Industrial Use 'giiit 'eiiit,
Benefits Ri'if I. RI7
0 Very Low RDS(on) at 4.5V l/ss l, DS . . S
o Ultra-Low Gate Impedance G ‘GD
q Fully Characterized Avalanche Voltage D-Pak I-Pak
and Current IRLR8726PbF IRLU8726PbF
o Lead-Free
o RoHS compliant G D S
Gate Drain Source
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
Vss Gate-to-Source Voltage i 20
ID © TC = 25°C Continuous Drain Current, Vas @ 10V 86©
ID @ TC = 100°C Continuous Drain Current, Vss @ 10V 61 © A
|DM Pulsed Drain Current CD 340
pD @Tc = 25°C Maximum Power Dissipation © 75 w
PD orc = 100°C Maximum Power Dissipation © 38
Linear Derating Factor 0.5 W/°C
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case © - 2.0
ROJA Junction-to-Ambient (PCB Mount) © - 50 °C/W
R0JA Junction-to-Ambient - 110
Notes C) through © are on page 11
ORDERING INFORMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
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IRLR/U8726PbF
International
IEER 'uctifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, b = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 20 - mV/°C Reference to 25°C, ID = 1mA
RDSM) Static Drain-to-Source On-Resistance -- 4.0 5.8 m9 Vss = 10V, ID = 25A oo
- 5.8 8.0 Vss = 4.5V, b = 20A ©
Vasmm Gate Threshold Voltage 1.35 1.80 2.35 V Vos = Vas, ID = 50pA
AVssoo/ATu Gate Threshold Voltage Coefficient - -8.6 - mV/°C
loss Drain-to-Source Leakage Current -- -- 1.0 pA l/rss = 24V, Vss = 0V
- - 150 Vos = 24V, Vss = OV, T, = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -1OO Vas = -20V
gfs Forward Transconductance 73 -- -- S l/rss = 15V, ID = 20A
Q, Total Gate Charge - 15 23
0951 Pre-Vth Gate-to-Source Charge - 3.7 - Vos = 15V
Asa Post-Wh Gate-to-Source Charge - 1.9 - nC Vas = 4.5V
di Gate-to-Drain Charge _-.- 5.7 .__ ID = 20A
ngd, Gate Charge Overdrive - 3.7 - See Fig. 15
st Switch Charge (0952 + 09d) - 7.6 -
Qoss Output Charge - 10 - nC Vos = 15V, Vas = 0V
Rs Gate Resistance -- 2.0 3.5 Q
td(on) Turn-On Delay Time - 12 - VDD = 15V, Ves = 4.5VO)
t, Rise Time - 49 - ID = 20A
td(ott) Turn-Off Delay Time - 15 - ns Re = 1.8Q
t, Fall Time -- 16 -- See Fig. 13
Ciss Input Capacitance - 2150 - Vss = 0V
Coss Output Capacitance - 480 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 205 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 120 mJ
|AR Avalanche Current CD - 20 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current -- -- 86© MOSFET symbol D
(Body Diode) A showing the L-,
ISM Pulsed Source Current - - 340 integral reverse 5 c,
(Body Diode) (D p-n junction diode. R
Vso Diode Forward Voltage - - 1.0 V To = 25°C, Is = 20A, Vas = 0V ©
tn Reverse Recovery Time - 24 36 ns TJ = 25°C, IF = 20A, VDD = 15V
Qrr Reverse Recovery Charge - 52 78 nC di/dt = 300A/ps ©
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