IRLR8503TRLPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageElectrical CharacteristicsParameter Symbol Min Typ Max Units ConditionsDrain-to-Source V 30 – – V V ..
IRLR8503TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications Lead-FreeDescriptionGThis new device employs advanced HEXFET PowerMOSFET technology t ..
IRLR8503TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.R 18 mΩDS(on)The package is designed for vapor phase, infra-red,Q 20 nCGconvection, o ..
IRLR8503TRR ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications 100% R TestedGDescriptionGThis new device employs advanced HEXFET PowerMOSFET technol ..
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IRLR8503TRLPBF-IRLR8503TRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TaRRectifier
Low Conduction Losses
Minimizes Parallel MOSFETs for high current
applications
. Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve very low on-resistance.
The reduced conduction losses makes it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRLR8503 has been optimized and is 100% tested for
all parameters that are critical in synchronous buck
PD- 95095A
IRLR8503PbF
N-Channel Application-Specific MOSFET © -
IdealforCPU Core DC-DC Converters HEXFET MOSFET for DC DC Converters
DEVICE RATINGS (MAX. Values)
converters including R on, gate charge and Cdv/dt-
induced turn-on immulhsiiyf The IRLR8503 offers an IRLR8503PbF
extremely low combination of st & ROW) for reduced VDS 30V
losses in control FET applications.
Rmon 18 mg
The package is designed for vapor phase, infra-red, q, 20 no
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB st 8 nC
mountappiication. Q 29.5 no
Absolute Maximum Ratings
Parameter Symbol IRLR8503 Units
Drain-Source Voltage v, 30 V
Gate-Source Voltage Vss :20
Continuous Drain or Source TC = 25°C ID 44 A
Current (VGS 2 1OV)© Tc-- 90°C 32
Pulsed Drain CurrentC) L, 196
PowerDissipationS TC = 25°C PD 62 W
TC: 90°C 30
Junction & Storage Temperature Range T J' TSTG -55 to 150 ''C
Continuous Source Current (Body Diode) Is 15 A
Pulsed source Current co Is,, 196
Thermal Resistance
Parameter Symbol Max. Units
Maximum Junction-to-Ambient® Rm 50 "C/IN
Maximum Junction-to-Lead M 2.0 'C/W
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IRLR8503PbF International
TORRectifier
Electrical Characteristics
Parameter Symbol Min Typ Max Units Conditions
Drain-to-Source V(BR)Dss 30 - - V Vas = 0V, ID = 250pA
Breakdown Voltage'
Static Drain-Source RDS(on) - 11 16 mn Vss = 10V, r, =15A©
on Resistance* - 13 18 Vas = 4.5V, r, =15A
Gate Threshold Voltage' Ves(th) 1.0 V VDS = VGS, ID = 250pA
Drain-Source Leakage Current |DSS - - 30* pA Vos = 24V, Vss = O
- - 150 VDS = 24V, VGS = 0,
Ti = 100°C
Gate-Source Leakage Current* lass - - 1100 nA Vas = t121/
Total Gate Charge Control FET' a, - 15 20 Vas-- 5V, ID: 15A, VDS=16V,
Total Gate Charge Sync FET* q, - 13 17 Vas = 5V, VDS< 100mV
Pre-Vth 0951 - 3.7 - VDS = 16V, ID = 15A
Gate-Source Charge
Post-Vth Qgs2 - 1 .3 - nC
Gate-Source Charge
Gate to Drain Charge di - 4.1 -
Switch Charge' (As, + di) st - 5.4 8
Output Charge' Qoss - 23 29.5 Vos = 16V, Vas = 0
Gate Resistance R, - 1.7 - Q
Turn-on Delay Time tum - 10 - Va, = 16V, ID = 15A
Drain Voltage Rise Time t - 18 - ns Vas = 5V
Turn-off Delay Time t, (om - 11 - Clamped Inductive Load
Drain Voltage FallTime tf, - 3 - See test diagram Fig 14.
Input Capacitance Ciss - 1650 -
Output Capacitance Coss - 650 - pF Vos = 25V, Vas = 0
Reverse Transfer Capacitance Crss - 58 -
Source-Drain Rating & Characteristics
Parameter Symbol Min Typ Max Units Conditions
Diode Forward Voltage' Va, - 1.0 V ls = 15A©, l/ss = 0V
Reverse Recovery Charge) Qrr - 76 nC di/dt = 700A/ps
VDS = 16V, l/ss = 0V, IS =15A
Reverse Recovery Charge OMS) - 67 di/dt = 7OOA/ps
(with Parallel Schottky)) (with 1OBQO40)
Va, = 16V, I/ss = 0V, ls =15A
Notes: -
C) Repetitive rating; pulse width limited by max.junction temperature. (,,i,) Jg, I 'gl':',):',,',',',;', Ass tb d . ll bl
© Pulse width LC 300 ps; duty cycle 3 2%. acula e con Inuous curr_en . ase on maxumum a Ta e
(3 When mounted on 1 inch square copper board, t < 10 sec. Junction temperature; switching and other losses will
decrease RMS current capability; package limitation
current = 20A.
Devices are 100% tested to these parameters.
2
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