IRLR8259 ,25V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRLR8259PbFIRLU8259PbF
IRLR8259PBF ,25V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Proce ..
IRLR8259TRPBF , HEXFET Power MOSFET
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IRLR8503TRLPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageElectrical CharacteristicsParameter Symbol Min Typ Max Units ConditionsDrain-to-Source V 30 – – V V ..
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IRLR8259-IRLR8259PBF
25V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 97360
International
a R ifi llRLR8259PbF
TOR, ech Ier
A r . lRLU8259PbF
pp Icatlons
0 High Frequency Synchronous Buck HEXFET® Power MOSFET
Converters for Computer Processor Power Voss RDS(on) max Clg
o High Frequency Isolated DC-DC 25V 8 7mf2 6 8nC
Converters with Synchronous Rectification . .
for Telecom and Industrial Use
Benefits "i1li'i's" iii))
o Very Low RDS(on) at 4.5V I/ss l, S D3
o Ultra-Low Gate Impedance G G
ct Fully Characterized Avalanche Voltage D-Pak l-Pak
and Current IRLR8259PbF IRLU8259PbF
Lead-Free
RoHS compliant G D S
Gate Drain Source
Absolute Maximum Ratings
Parameter Max. Units
I/rss Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage A 20
ID @ TC = 25°C Continuous Drain Current, I/ss @ 10V 57©
ID @ TC = 100°C Continuous Drain Current, I/ss @ 10V 400D A
|DM Pulsed Drain Current co 230
PD @TC = 25°C Maximum Power Dissipation (S) 48 W
PD @Tc = 100°C Maximum Power Dissipation (S) 24
Linear Derating Factor 0.32 W/°C
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 3.15
ReJA Junction-to-Ambient (PCB Mount) CO - 50 'C/W
RGJA Junction-to-Ambient - 110
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes C) through G) are on page 11
1
12/16/08
IRLR/U8259PbF
International
TOR Rectifier
Static © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 -- -- V I/tss = 0V, Ir, = 250uA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 18 -- mV/°C Reference to 25oC, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance -- 6.3 8.7 l/ss = 10V, ID = 21A ©
--.- 10.6 12.9 mg2 l/ss = 4.5V, ID =17A ©
VGS(th) Gate Threshold Voltage 1.35 1.90 2.35 v Vos = VGS, ID = 25PA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -7.1 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 Vos = 20V, Ves = 0V
- - 150 PA Vos = 20v, I/ss = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 Ves = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 55 - - S Vos = 13V, ID = 17A
q, Total Gate Charge - 6.8 10
0951 Pre-Vth Gate-to-Source Charge - 1.5 - l/ns = 13V
Qgs2 Post-Vth Gate-to-Source Charge - 1.1 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 2.4 - ID = 17A
QQodr Gate Charge Overdrive - 1.8 - See Fig. 16
st Switch Charge (0952 + di) - 3.5 -
Qoss Output Charge - 5.9 - nC V03 = 16V, I/ss = 0V
Rs Gate Resistance - 2.2 3.6 Q
td(on) Turn-On Delay Time - 8.4 - vDD = 13V, I/ss = 4.51/0)
t, Rise Time - 38 - ns ID = 17A
tam) Turn-Off Delay Time - 9.1 - Rs = 1.89
t, Fall Time - 8.9 -- See Fig. 14
Ciss Input Capacitance -- 900 -- Ves = 0V
Coss Output Capacitance -.-.- 300 -- PF Vos = 13V
Crss Reverse Transfer Capacitance -- 110 -- f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 67 mJ
'AR Avalanche Current C) - 17 A
EAR Repetitive Avalanche Energy C) - 4.8 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - MOSFET symbol D
. 56© . _
(Body Diode) A showing the ii
ISM Pulsed Source Current - - 230 integral reverse 6 fl
(Body Diode) C) p-n junction diode. a
Vso Diode Forward Voltage - - 1.0 v TJ = 25°C, ls = 17A, Vas = ov ©
trr Reverse Recovery Time - 17 26 ns TJ = 25°C, IF = 17A, VDD = 13V
er Reverse Recovery Charge - 15 23 nC di/dt = 200A/ps (3)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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