IRLR8256 ,25V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRLR8256PbFIRLU8256PbF
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IRLR8256-IRLR8256TRPBF
25V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 96208A
International
a R ifi IRLR8256PbF
Tom ech Ier
A li . IRLU8256PbF
pp Icatlons ©
q High Frequency Synchronous Buck HEXFET Power MOSFET
Converters for Computer Processor Power Voss RDS(on) max Qg
0 High Frequency Isolated DC-DC
. . . . 25V 5.7mQ 10nC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits _igi,iir, regiit,
. Very Low RDS(on) at 4.5V I/tss Ri'i7 l Nie .
o Ultra-Low Gate Impedance l, ’S .58
0 Fully Characterized Avalanche Voltage G G
and Current D-Pak l-Pak
Lead-Free IRLR8256PbF IRLU8256PbF
RoHS compliant
Gate Drain Source
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage t 20
ID @ To = 25°C Continuous Drain Current, Vss @ 10V 81 (D
ID @ To = 100°C Continuous Drain Current, Vss @ 10V 57© A
kos, Pulsed Drain Current OD 325
PD @TC = 25°C Maximum Power Dissipation © 63
pan @Tc = 100°C Maximum Power Dissipation © 31 W
Linear Derating Factor 0.42 W/°C
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range “0
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter
Junction-to-Ambient
ORDERING INFORMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes OD through © are on page 11
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08/02/1 1
IRLR/U8256PbF
International
TOR Rectifier
Static © To = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 -- -- V Vss = 0V, ID = 250pA
ABI/rss/AT: Breakdown Voltage Temp. Coefficient - 18 -- mV/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.2 5.7 mf2 Vss = IOM, ID = 25A ©
- 6.7 8.5 l/ss = 4.5V, ID = 20A ©
Vesm Gate Threshold Voltage 1.35 1.8 2.35 V v = v I = 25 A
AVGSUh/ATJ Gate Threshold Voltage Coefficient - -7.2 - mV/°C DS GS, D p
loss Drain-to-Source Leakage Current - - 1.0 PA Vos = 20V, l/ss = 0V
- - 150 Vos = 20V, Vss = 0V, T, =125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 81 - - S Vos = 13V, ID = 20A
q, Total Gate Charge - IO 15
09:1 Pre-Vth Gate-to-Source Charge -- 2.3 -- Vos = 13V
Qgsz Post-Vth Gate-to-Source Charge -- 1.6 -- nC Ves = 4.5V
di Gate-to-Drain Charge - 3.6 - lo = 20A
ngdr Gate Charge Overdrive - 2.6 - See Fig. 16
st Switch Charge (ths + di) - 5.1 -
Qoss Output Charge - 9.0 - nC I/os = 16V, Vas = 0V
Re Gate Resistance - 2.5 3.9 f2
td(on) Turn-On Delay Time - 9.7 - VDD = 13V, Vas = 4.5V©
t, Rise Time - 46 _ ns lo = 20A
td(off) Turn-Off Delay Time - 12 - Rs = 1.89
t, Fall Time - 8.5 - See Fig. 14
Ciss Input Capacitance - 1470 - Ves = 0V
Cass Output Capacitance - 453 - pF Vos = 13V
Crss Reverse Transfer Capacitance -- 185 -- f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 86 mJ
'AR Avalanche Current OD - 20 A
EAR Repetitive Avalanche Energy C) - 6.3 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol "-""-, D
. - - 81 © . / [-v,
(Body Diode) A showing the (') 2:1
ISM Pulsed Source Current - _ 325 integral reverse Li "el, E/
(Body Diode) C) p-n junction diode. \‘7/ c",
Vso Diode Forward Voltage - - 1.0 v T J = 25°C, Is = 20A, l/tas = OV ©
trr Reverse Recovery Time - 19 29 ns Tu = 25°C, IF = 20A, VDD = 13V
er Reverse Recovery Charge - 17 26 n0 di/dt = 250A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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