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IRLR8203
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94404
IRLR8203
IRLU8203
International
Tait Rectifier SMPS MOSFET
HEXFET© Power MOSFET
Applications V R
o High Frequency Isolated DC-DC DSS DS(on) a ID
Converters with Synchronous Rectification 30V 6.8mQ 110A©
for Telecom and Industrial Use
. High Frequency Buck Converters for
Computer Processor Power tl",
Benefits se,,'',''
o Ultra-Low Gate Impedance
0 Very Low RDS(on) at 4.5V VGS
0 Fully Characterized Avalanche Voltage D-Pak I-Pak
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage i 20 V
In @ Tc = 25°C Continuous Drain Current, VGs @ 10V 110 ©
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 76 © A
IDM Pulsed Drain CurrentC) 120
Po @Tc = 25°C Maximum Power Dissipation® 140 W
Pro @Tc = 100°C Maximum Power Dissipation® 69 W
Linear Derating Factor 0.92 W/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Typ. Max. Units
Ravc Junction-to-Case - 1 .09
ReJA Junction-to-Ambient (PCB mount)' - 50 'C/W
ReJA Junction-to-Ambient - 110
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes © through © are on page 10
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IRLR/U8203
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V N/ss = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.027 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 5.6 6.8 mn VGS = 10V, ID = 15A co
7.1 9.0 VGs = 4.5V, ID = 12A ©
Ves(m) Gate Threshold Voltage 1.0 - 3.0 V Vos = I/cs, ID = 250pA
loss Drain-to-Source Leakage Current : : 12000 pA $2: , 'l/g,' x: , g, To = 125°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGs = -20V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 35 - - S Vos = 15V, ID = 12A
09 Total Gate Charge - 33 50 ID = 12A
Qgs Gate-to-Source Charge - 5.7 8.5 nC Vros = 24V
qu Gate-to-Drain ("Miller") Charge - 17 25 Ffas = 4.5V ©
Qass Output Gate Charge - 23 34 V05 = 0V, Vos = 10V
two...) Turn-On Delay Time - 15 - VDD = 15V
tr Rise Time - 99 - ns lo = 12A
1mm Turn-Off Delay Time - 30 - Rs = 6.89
tr Fall Time - 69 - Vss = 4.5V ©
Ciss Input Capacitance - 2430 - VGS = 0V
Coss Output Capacitance - 1200 - VDS = 15V
Crss Reverse Transfer Capacitance - 250 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 310 m]
IAR Avalanche CurrentC0 - 30 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 110@ MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 120 p-n junction diode. s
Vso Diode Forward Voltage - 0.75 1.3 v TJ = 25°C, ls =12A,VGS = 0v S
- 0.65 - TJ = 125°C, ls = 12A, l/ss = 0V ©
tn Reverse Recovery Time - 48 72 ns T: = 25°C, IF = 12A, VR=15V
Qrr Reverse Recovery Charge - 62 92 nC di/dt = 100A/ps ©
trr Reverse Recovery Time - 49 74 ns TJ = 125°C, IF = 12A, VR=15V
Qrr Reverse Recovery Charge - 67 100 nC di/dt = 100A/ps ©
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