IRLR8113TRRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageIRLR8113PbFIRLU8113PbFHEXFET Power MOSFET
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IRLR8113TRPBF-IRLR8113TRRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95779A
IRLR8113PbF
IRLU8113PbF
International
TOR Rectifier
Applications HEXFET© Power MOSFET
o High Frequency Synchronous Buck VDSS RDS(on) max Qg
Converters for Computer Processor Power
q High Frequency Isolated DC-DC 30V th0mf2 22nC
Converters with Synchronous Rectification
for Telecom and Industrial Use (iiit
o Lead-Free Ri'i7't 1Riirt
Benefits
0 Very Low Ros(on) at 4.5V VGS
o Ultra-Low Gate Impedance D-Pak l-Pak
0 Fully Characterized Avalanche Voltage IRLR8113 IRLU8113
and Current
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage * 20
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V 94©
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 67© A
IDM Pulsed Drain Current CD 380
PD @Tc = 25°C Maximum Power Dissipation 89 W
Pro @Tc = 100°C Maximum Power Dissipation 44
Linear Derating Factor 0.59 W/°C
To Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10 lbFin (1.1 N'm)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1.69
ROJA Junction-to-Ambient (PCB Mount) s - 50 ''ClW
ROJA Junction-to-Ambient - 110
Notes OD through S are on page 11
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IRLR/U8113PbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 21 - mV/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.8 6.0 m9 VGS = 10V, ID = 15A (3
- 5.8 7.4 Vss = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.35 - 2.25 V Vos = I/ss, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -5.6 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, VGS = 0V
- - 150 Vos = 24V, N/ss = 0V, T, = 175°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 74 - - S Ihos = 15V, ID = 12A
Qg Total Gate Charge - 22 32
0951 Pre-Vth Gate-to-Source Charge - 6.1 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 1.7 - nC VGS = 4.5V
di Gate-to-Drain Charge - 6.8 - ID = 12A
ngdr Gate Charge Overdrive - 7.4 - See Fig. 16
st Switch Charge (0952 + di) - 8.5 -
Qoss Output Charge - 14 - nC Vos = 16V, VGS = OV
td(on) Turn-On Delay Time - 9.2 - Vor, = 15V, Vss = 4.5V co
t, Rise Time - 3.8 - ID = 12A
lam) Turn-Off Delay Time - 15 - ns Clamped Inductive Load
" Fall Time - 10 -
Ciss Input Capacitance - 2920 - VGS = 0V
C055 Output Capacitance - 610 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 260 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© _ 145 m J
|AR Avalanche Current CO - 13 A
EAR Repetitive Avalanche Energy CO - 8.9 m J
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 94© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 380 integral reverse G
(Body Diode) CD p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 12A, VGs = 0V ©
trr Reverse Recovery Time - 33 49 ns To = 25°C, IF = 12A, VDD = 15V
er Reverse Recovery Charge - 30 45 nC di/dt = 100A/ps (3)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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