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IRLR8103V-IRLR8103VTR-IRLR8103VTRR
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
. N-Channel Application-Specific MOSFETs
. Ideal for CPU Core DC-DC Converters
. Low Conduction Losses
PD-94021C
IRLR8103V
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. Low Switching Losses D
. Minimizes Parallel MOSFETs for high current
applications
. 100% RG Tested
Description G
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented D-Pak s
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRLR8103V has been optimized for all parameters DEVICE CHARACTERlSTlCSS
that are critical in synchronous buck converters including
RDS
The I LR8103V offers an extremely low combination of RDS(on) 7.9 m9
st & R080”) for reduced losses in both control and Qs 27 nC
s nchronous FETa Iications.
y pp Qsw 12 nC
The package is designed for vapor phase, infra-red, Q 29nC
convection, or wave soldering techniques. Power oss
dissipation of greater than 2W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Parameter Symbol IRLR8103V Units
Drain-Source Voltage I/os 30 V
Gate-Source Voltage N/ss :20
Continuous Drain or Source Current TC = 25''C I 91
(V63 > 10V) TC= 90°C D 63 A
Pulsed Drain Current (D IBM 363
TC = 25''C
Power Dissipation © PD 115 W
TC = 90°C 60
Junction & Storage Temperature Range Tu , TSTG -55 to 150 ''C
Continuous Source Current (Body Diode) Is 91 A
Pulsed Source Current (D Iss, 363
Thermal Resistance
Parameter Symbol Typ. Max. Units
Maximum Junction-to-Ambient ©© RNA - 50 'C/W
Maximum Junction-to-Case © ch - 1.09
1
10/22/04
IRLR6y103V International
TOR Rectifier
Electrical Characteristics
Parameter Symbol Min Typ Max Units Conditions
Drain-to-Source Breakdown Voltage BVDSS 30 - - V Ves = 0V, ID = 250pA
Static Drain-Source RDS(on) - 6.9 9.0 m9 VGS = 10V, ID = 15A ©
On-Resistance - 7.9 10.5 VGS = 4.5V, ID = 15A ©
Gate Threshold Voltage Vsam) 1.0 - 3.0 V VDs = I/ss, ID = 250PA
Drain-to-Source Leakage Current loss - - 50 pA Vos = 30V, VGs = 0V
_ - 20 Vros = 24V, VGS = 0
- - 100 pA Vos = 24V, VGS = 0, TJ = 100°C
Gate-Source Leakage Current less - - i100 nA VGs = i 20V
Total Gate Charge, Control FET Qs - 27 - VGs = 5V, ID = 15A, Vos = 16V
Total Gate Charge, Synch FET Qs - 23 - Vss = 5V, Vros < 100mV
Pre-Vth Gate-Source Charge Qes1 - 4.7 -
Post-Vth Gate-Source Charge QGsz - 2.0 - nC Vos = 16V, '0 = 1 5 A
Gate to Drain Charge QGD - 9.7 -
Switch Charge (Qgsz + di) st - 12 -
Output Charge Qoss - 29 - Vos = 16V, VGS = 0
Gate Resistance Rs 0.8 - 3.1 Q
Turn-On Delay Time tam) - 1O - VDD = 16V
Rise Time t, - 9 - ns ID = 15A
Turn-Off Delay Time tam) - 24 - VGS = 5.0V
Fall Time tr - 18 - Clamped Inductive Load
Input Capacitance Ciss - 2672 -
Output Capacitance Coss - 1064 - pF Vss = 16V,Vss=0
Reverse Transfer Capacitance Crss - 109 -
Source-Drain Rating & Characteristics
Parameter Symbol Min Typ Max Units Conditions
Diode Forward Voltage VsD - 0.9 1.3 V IS = 15A@, Ves = 0V
Reverse Recovery Charge (ii) Qrr _ 103 - nC di/dt - 700A/ps
Vos =16V,Vss = 0V, IF =15A
Reverse Recovery Charge OMS) - 96 - nC di/dt = 700A/ps , (with 1OBQO40)
(with Parallel Schottky) © V03: 16V, Vss = 0V, ls = 15A
Notes:
C) Repetitive rating; pulse width limited by max. junction temperature.
Q) Pulse width S 400 ps; duty cycle I 2%.
8) When mounted on 1 inch square copper board, t < 10 sec.
(l) Typ = measured - A,,,,
(5) Typical values of RDS(on) measured at VGS = 4.5V, QG, st and Qoss measured at VGS = 5.0V, l, = 15A.
© Re is measured at Tu approximately 90°C
2
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