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IRLR7833-IRLR7833PBF-IRLR7833TR-IRLR7833TRL-IRLR7833TRR-IRLU7833
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94547A
International IRLR7833
TOR Rectifier IRLU7833
HEXFET® Power MOSFET
Applications
q High Frequency Synchronous Buck VDSS RDS(on) max Qg
Converters for Computer Processor Power 30V 4.5mQ 33nC
q High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use @ 4it
'i1rii, l. " ,
Benefits
o Very Low RDS(on) at 4.5V VGs
o Ultra-Low Gate Impedance
. D-Pak l-Pak
0 Fully Characterized Avalanche Voltage IRLR7833 IRLU7833
and Current
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage i 20
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V 140©
ID @ TC = 100°C Continuous Drain Current, N/ss @ 10V 99© A
los, Pulsed Drain Current OD 560
PD @Tc = 25°C Maximum Power Dissipation s 140 W
Pro @Tc = 100°C Maximum Power Dissipation s 71
Linear Derating Factor 0.95 W/°C
Tu Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1.1N'm)
Thermal Resistance
Parameter Typ. Max. Units
Roc Junction-to-Case - 1.05
ROJA Junction-to-Ambient (PCB Mount) s - 50 "C/W
ROJA Junction-to-Ambient - 110
Notes OD through S are on page 11
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IRLR/U7833 International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 19 - mV/°C Reference to 25°C, ID = 1mA
RDS(an) Static Drain-to-Source On-Resistance - 3.6 4.5 mn Vss = 10V, ID = 15A ©
- 4.4 5.5 Vss = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.4 - 2.3 V Vos = VGS, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -6.0 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, VGS = 0V
- - 150 Vos = 24V, I/ss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Veg = -20V
gfs Forward Transconductance 66 - - S l/os = 15V, ID = 12A
q, Total Gate Charge - 33 50
0951 Pre-Vth Gate-to-Source Charge - 8.7 - Vos = 16V
0952 Post-Vth Gate-to-Source Charge - 2.1 - nC Vss = 4.5V
di Gate-to-Drain Charge - 13 - ID = 12A
ngdr Gate Charge Overdrive - 9.9 - See Fig. 16
st Switch Charge (Qgsz + di) - 15 _
Qoss Output Charge - 22 - nC Vos = 16V, N/ss = 0V
td(on) Turn-On Delay Time - 14 - VDD = 15V, VGS = 4.5V ©
tr Rise Time - 6.9 - ID = 12A
tum) Turn-Off Delay Time - 23 - ns Clamped Inductive Load
t, Fall Time - 15 -
Ciss Input Capacitance - 4010 - VGS = 0V
Coss Output Capacitance - 950 - pF Ws = 15V
Crss Reverse Transfer Capacitance - 470 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS ng se 530
IAR va urre 20
EAR 14
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 1403D MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 560 integral reverse G
(Body Diode) CDO p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V To = 25°C, IS = 12A, VGS = 0V ©
tn Reverse Recovery Time - 39 58 ns T J = 25°C, IF = 12A, VDD = 15V
er Reverse Recovery Charge - 37 55 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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